Properties of aminosilane precursors for the preparation of Si-C-N films

Сысоев, С. В.; Nikulina, L. D.; Косинова, М. Л.; Rakhlin, V. I.; Tsirendorzhieva, I. P.; Lis, A. V.; Воронков, М. Г.

doi:10.1134/s0020168511110227

Cited by 13 publications

(6 citation statements)

References 5 publications

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“…The initial gas mixture composition was expressed through the inlet molar proportion P(NH 3 The condensed phases were believed to be constant composition phases, and gaseous compounds obey the ideal gas law. Ternary silicon carbonitride thermodynamic constants are unknown, but their appearance is quite likely in the co-deposition region of silicon nitride and silicon carbide [16,17]. The calculations of the equilibrium composition for a flow-type reactor is based on minimization of the ratio between the Gibbs free energy and the amount of one of the non-precipitated element with constraints defined by the terms of the material balance of the system [27].…”

Section: Thermodynamic Modelingmentioning

confidence: 99%

“…However, the data on the temperature/vapor pressure dependence are not available for many organosilicon compounds. Physical and chemical properties of several silicon-containing precursors: Et 3 GeN(SiMe 3 ) 2 and Et 3 SnN(SiMe 3 ) 2 [15], EtN(SiMe 3 ) 2 [16], Me 2 Si(NEt 2 ) 2 , MeHSi (NEt 2 ) 2 , HSi(NEt 2 ) 3 , MeSi(NEt 2 ) 3 and Si(NEt 2 ) 4 [17], Me 3 SiNEt 2 , Me 3 SiNHAll, Me 3 SiNHPh [18] have been studied earlier.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

et al. 2015

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Section: Thermodynamic Modelingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

et al. 2015

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“…The new liquid organosilicon precursor -methyltris(diethylamino)silane with the ratio of the main elements Si : C : N of 1 : 13 : 3 was synthesized and described by S.V. Sysoev et al, 47 and its structure is shown in Figure 1.…”

Section: Thermodynamic Simulationmentioning

confidence: 99%

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

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Plekhanov

Golubenko

et al. 2014

ECS J. Solid State Sci. Technol.

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Deposition of thin SiC x N y layers from a new single-source organosilicon compound, methyltris(diethylamino)silane (MTDEAS) mixed with helium or nitrogen is studied by using thermodynamic simulation of Si-C-N-H(He)-O system and experimentally by low pressure (10 −2 -10 Torr) plasma enhanced chemical vapor decomposition (PECVD) in the temperature range of 300-1300 K. Thermodynamic simulation allowed to find the temperature boundaries of solid phase formation. The phase composition, as well as physicochemical and functional properties of the layers has been studied using a complex of modern experimental techniques, including Raman spectroscopy, scanning electron (SEM) and atomic force microscopy (AFM), X-ray diffraction using synchrotron radiation (XRD-SR), ellipsometry and spectrophotometry. The electrophysical parameters were measured using the C-V characteristics. The microhardness and Young's modulus were determined by Nanoindentation method. It was shown that the layers contain crystals of phases belonging to Si 3-x C x N 4 structures, such as α-Si 3 N 4 , α-Si 2 CN 4 , α-SiC 2 N 4 , and α-C 3 N 4 which, possibly, are embedded in the amorphous matrix of silicon carbonitride layers.

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“…However, the data on thermal properties mentioned above are rare. Quantitative data on thermal properties of several organosilicon precursors was published by us in [20,21].…”

Section: Introductionmentioning

confidence: 99%

Thermal properties of some organosilicon precursors for chemical vapor deposition

Ermakova

Сысоев

Nikolaev

et al. 2016

J Therm Anal Calorim

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Five volatile organosilicon compounds: trimethyl (phenyl)silane Me 3 SiC 6 H 5 (I), trimethyl(cyclohexyl)silane Me 3 SiC 6 H 11 (II), trimethyl(phenoxy)silane Me 3 SiOC 6 H 5 (III), trimethyl(cyclohexyloxy)silane Me 3 SiOC 6 H 11 (IV), and trimethyl(allyloxy)silane Me 3 SiOC 3 H 5 (V) were synthesized, purified, and identified. Data of IR spectroscopy; gas-liquid chromatography; and 1 H NMR, 13 C NMR, 29 Si NMR analyses were used to identify and confirm the high purity of the compounds (more than 99.6 %). The thermal stability of the compounds was investigated by DTA-TG. The quantitative data on temperature dependences of the saturated vapor pressure of the compounds were obtained by static tensimetry method with glass membrane null manometer. The volatilities of compounds Me 3 SiOC 6 H 5 , Me 3 SiC 6 H 5 , Me 3 SiC 6 H 11 , Me 3 SiOC 6 H 11 were shown to be close due to the presence of large-size phenyl/cyclohexyl group. The replacement of phenyl/cyclohexyl group by allyl substituent in the molecule led to significant increase in volatility for Me 3 SiOC 3 H 5 in comparison with compounds mentioned before. The vapor pressure of all of the compounds is enough to use them as precursors in CVD processes without additional heating. The thermodynamic parameters (enthalpies and entropies) of vaporization processes for four compounds II-V were determined for the first time.

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Properties of aminosilane precursors for the preparation of Si-C-N films

Cited by 13 publications

References 5 publications

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

PECVD Synthesis of Silicon Carbonitride Layers Using Methyltris(diethylamino)silane as the New Single-Source Precursor

Thermal properties of some organosilicon precursors for chemical vapor deposition

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