560 TW peak power has been achieved experimentally using a Cr:forsterite master oscillator at 1250 nm, a stretcher, three optical parametrical amplifiers based on KD*P crystals providing 38 J energy in the chirped pulse at 910 nm central wavelength, and a vacuum compressor providing 43 fs pulse duration. To our knowledge, it is a world-record OPCPA system and one of the five most powerful laser systems currently available.
The observation of far-infrared stimulated emission from shallow donor transitions in silicon is reported. Lasing with a wavelength of 59 &mgr;m due to the neutral donor intracenter 2p(0)-->1s(E) transition in Si:P pumped by CO2 laser radiation is obtained. Populations of D0 and D- center states and the balance of the radiation absorption and amplification are theoretically analyzed.
200 TW peak power has been achieved experimentally using a Cr:forsterite master oscillator at 1250 nm, a stretcher, three optical parametrical amplifiers based on KD*P (DKDP) crystals providing 14.5 J energy in the chirped pulse at 910 nm central wavelength, and a vacuum compressor. The final parametrical amplifier and the compressor are described in detail. Scaling of such architecture to multipetawatt power is discussed.
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