Stimulated Emission from Donor Transitions in Silicon

Pavlov, S.G.; Жукавин, Р.Х.; Orlova, E. E.; Shastin, V. N.; Kirsanov, A. V.; Hübers, Heinz‐Wilhelm; Auen, K.; Riemann, H.

doi:10.1103/physrevlett.84.5220

Cited by 153 publications

(76 citation statements)

References 24 publications

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“…However, this effect is small and can be neglected because of the fast relaxation from these states (∼10 11 s −1 ). 5,10 The peak pump power on the sample at the 1s(A 1 ) → 2p 0 transition energy (34.1 meV) was estimated from the measured average output pulse energy to be ∼60 nJ per micropulse. The pump power was attenuated up to 35 dB by a set of wire-grid attenuators.…”

Section: Methodsmentioning

confidence: 99%

“…In addition, several exciting applications rely on transitions between states of group V donors in Si. These include using shallow donors embedded in a Si matrix as active elements in qubits for quantum computing and spintronics, [6][7][8][9] terahertz lasers operating on donor optical transitions, 10 and terahertz Raman lasers. 11 All of these applications require a detailed understanding of the lifetimes of excited states.…”

Section: Introductionmentioning

confidence: 99%

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Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

et al. 2013

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The low-temperature (∼5 K) phonon-assisted relaxation of the 2p 0 state of phosphorus donors in isotopically pure, monocrystalline 28 Si has been studied in the time domain using a pump-probe technique. The lifetime of the 2p 0 state in 28 Si:P is found to be 235 ps, which is 16% larger than the lifetime of a reference Si:P sample with a natural isotope composition. The interaction of the 2p 0 state with intervalley g-type longitudinal acoustic and f -type transverse acoustic phonons determines its lifetime. This interaction, which depends on the homogeneity of the crystal, becomes weaker in 28 Si because of its more perfect crystal lattice compared to natural Si, and this leads to a longer lifetime. The difference between the linewidths of the 1s(A 1 ) → 2p 0 transition in 28 Si:P and natural Si:P is more than a factor of two. It follows that linewidth broadening due to isotopic composition is an inhomogeneous process.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

et al. 2013

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“…A similar four-level laser scheme was expected for silicon doped by bismuth, where the laser levels should be determined by resonant interaction with an optical phonon [31,32]. Spontaneous [32,33] and stimulated emission from Si:P crystals were obtained in 1999 [15]. In 2000 Pokrovskiȋ et al proposed using the forbidden optical transitions between 1s-type donor states with the same parity for achieving far-infrared laser action in silicon [34].…”

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confidence: 99%

“…The first silicon laser was reported in 2000 [15]. It operates on optical transitions between excited states of the isocoric phosphorus donor (emission wavelength: 55.2 mm) in pulsed mode under optical pumping by a midinfrared laser at low lattice temperatures.…”

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confidence: 99%

The physical principles of terahertz silicon lasers based on intracenter transitions

Pavlov

Жукавин

Shastin

et al. 2012

Physica Status Solidi (b)

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The first silicon laser was reported in the year 2000. It is based on impurity transitions of the hydrogen-like phosphorus donor in monocrystalline silicon. Several lasers based on other group-V donors in silicon have been demonstrated since then. These lasers operate at low lattice temperatures under optical pumping by a midinfrared laser and emit light at discrete wavelengths in the range from 50 to 230 mm (between 1.2 and 6.9 THz). Dipole-allowed optical transitions between particular excited states of group-V substitutional donors are utilized for donortype terahertz (THz) silicon lasers. Population inversion is achieved due to specific electron-phonon interactions of the impurity atom. This results in long-living and short-living excited states of the donor centers. Another type of THz laser utilizes stimulated resonant Raman-type scattering of photons by a Raman-active intracenter electronic transition. By varying the pump-laser frequency, the frequency of the Raman intracenter silicon laser can be continuously changed between at least 4.5 and 6.4 THz. The gain of the donor and Ramantype THz silicon lasers is of the order of 0.5 to 10 cm À1 , which is similar to the net gain realized in THz quantum cascade lasers and infrared Raman silicon lasers. In addition, fundamental aspects of the laser process provide new information about the peculiarities of electronic capture by shallow impurity centers in silicon, lifetimes of nonequilibrium carriers in excited impurity states, and electron-phonon interaction.

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“…[17] Furthermore, recent calculations suggest an intrinsic 2p-1s transition timescale of over 1ns, [18] which has even enabled population inversion and lasing in externally-pumped systems. [19] We now describe a simple numerical model to calculate the transit-time probability function which incorporates the details of trapping into (and emission out of) the impurity state. To capture the observed behavior, one must consider the convolution of all 0 ≤ k ≤ N possible trapping events in N available traps with trapping probability α:…”

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Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

Lü

Appelbaum

2011

Phys. Rev. Lett.

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Experimental evidence of electron spin precession during travel through the phosphorus-doped Si channel of an all-electrical device simultaneously indicates two distinct processes: (i) short timescales (≈50ps) due to purely conduction-band transport from injector to detector and (ii) long timescales (≈1ns) originating from delays associated with capture/re-emission in shallow impurity traps. The origin of this phenomenon, examined via temperature, voltage, and electron density dependence measurements, is established by means of comparison to a numerical model and is shown to reveal the participation of metastable excited states in the phosphorus impurity spectrum. This work therefore demonstrates the potential to make the study of macroscopic spin transport relevant to the quantum regime of individual spin interactions with impurities as envisioned for quantum information applications.

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Stimulated Emission from Donor Transitions in Silicon

Cited by 153 publications

References 24 publications

Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

Isotope effect on the lifetime of the 2p0state in phosphorus-doped silicon

The physical principles of terahertz silicon lasers based on intracenter transitions

Spin-Polarized Transient Electron Trapping in Phosphorus-Doped Silicon

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