Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra
High-quality CuInSe2 single crystals were studied using polarization resolved photoluminescence (PL) and magnetophotoluminescence (MPL). The emission lines related to the first (n=2) excited states for the A and B free excitons were observed in the PL and MPL spectra at 1.0481 meV and 1.0516 meV, respectively. The spectral positions of these lines were used to estimate accurate values for the A and B exciton binding energies (8.5 meV and 8.4 meV, respectively), Bohr radii (7.5 nm), band gaps (E-g(A)=1.050 eV and E-g(B)=1.054 eV), and the static dielectric constant (11.3) assuming the hydrogenic model
Excitonic recombination processes in high quality CuInSe2 single crystals have been studied by photoluminescence (PL) and reflectance spectroscopy as a function of excitation powers and temperature. Excitation power dependent measurements confirm the identification of well-resolved A and B free excitons in the PL spectra and analysis of the temperature quenching of these lines provides values for activation energies. These are found to vary from sample to sample, with values of 12.5 and 18.4meV for the A and B excitons, respectively, in the one showing the highest quality spectra. Analysis of the temperature and power dependent PL spectra from the bound excitonic lines, labelled M1, M2, and M3 appearing in multiplets points to a likely assignment of the hole involved in each case. The M1 excitons appear to involve a conduction band electron and a hole from the B valence band hole. In contrast, an A valence band hole appears to be involved for the M2 and M3 excitons. In addition, the M1 exciton multiplet seems to be due to the radiative recombination of excitons bound to shallow hydrogenic defects, whereas the excitons involved in M2 and M3 are bound to more complex defects. In contrast to the M1 exciton multiplet, the excitonic lines of M2 and M3 saturate at high excitation powers suggesting that the concentration of the defects involved is low. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4709448
The effective g-factor in In0.53Ga0.47As/In0.52Al0.48As quantum well investigated by magnetotransport measurement J. Appl. Phys. 113, 033704 (2013) Electron effective mass in n-type electron-induced ferromagnetic semiconductor (In,Fe)As: Evidence of conduction band transport Appl. Phys. Lett. 101, 252410 (2012) Two-site Hubbard molecule with a spinless electron-positron pair J. Appl. Phys. 112, 123706 (2012) Electronic band structure and effective mass parameters of Ge1-xSnx alloys J. Appl. Phys. 112, 103715 (2012) First-principles study on the effective masses of zinc-blend-derived Cu2Zn−IV−VI4 (IV=Sn, Ge, Si and VI=S, Se)
Single crystals of CuGaSe 2 were studied using magnetophotoluminescence in magnetic fields up to 20 T at 4.2 K. The rate of the diamagnetic shift in the A free exciton peak was determined to be 9.82ϫ 10 −6 eV/ T 2 . This rate was used to calculate the reduced mass as 0.115m 0 , the binding energy as 12.9 meV, the Bohr radius as 5.1 nm and an effective hole mass of 0.64m 0 ͑m 0 is the free electron mass͒ of the free A exciton using a low-field perturbation approach and the hydrogenic model.
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