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980 nm vertical-cavity surface-emitting lasers based on submonolayer growth of quantum dots show clearly open eyes and operate error free with bit error rates better than 10 −12 at 25 and 85 • C for 20 Gb/s without current adjustment. The peak differential efficiency only reduces from 0.71 to 0.61 W/A between 25 and 85 • C; the maximum output power at 25 • C is above 10 mW.

Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz. A low threshold current of 170μA, high differential efficiency of 0.53W∕A, and high modulation current efficiency factor of 14GHz∕mA are realized from a 1μm oxide aperture single-mode device with a side mode suppression ratio of >40dB and peak output power of >1mW. The lasers are also suitable for high temperature operation.

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