Direct modulation and mode locking of 1.3 μm quantum dot lasers

Kuntz, M.; Fiol, G.; Lämmlin, M.; Bimberg, D.; Thompson, Mark G.; Tan, K.T.; Marinelli, C.; Wonfor, A.; Sellin, R.L.; Penty, R.V.; White, I.H.; Ustinov, V. M.; Zhukov, A. E.; Shernyakov, Yu. M.; Kovsh, A. R.; Ledentsov, N. N.; Schubert, C.; Marembert, V.

doi:10.1088/1367-2630/6/1/181

Cited by 65 publications

(34 citation statements)

References 17 publications

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“…Quantum dots (QDs), used as the active medium in lasers, offer the possibility of wavelength tuning and demonstrate ultrafast gain dynamics and better temperature stability, compared to quantum well (QW) lasers [1]. However, the trapping of carriers, for example in wetting layer (WL) states, means that they are not contributing to lasing, which is detrimental to device performance [2,3]. Submonolayer (SML) growth is an alternative to conventional Stranski-Krastanov (SK) growth and results in QD-like In-rich agglomerations without a WL, with areal densities of 10 12 cm −2 , which is much higher than for SK QDs (10 10 -10 11 cm −2 ) [1,4].…”

Section: Introductionmentioning

confidence: 99%

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

et al. 2016

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Charge-carrier confinement in nanoscale In-rich agglomerations within a lateral InGaAs quantum well (QW) formed from stacked submonolayers (SMLs) of InAs in GaAs is studied. Low-temperature photoluminescence (PL) and magneto-PL clearly demonstrate strong vertical and weak lateral confinement, yielding two-dimensional (2D) excitons. In contrast, high-temperature (400 K) magneto-PL reveals excited states that fit a Fock-Darwin spectrum, characteristic of a zero-dimensional (0D) system in a magnetic field. This paradox is resolved by concluding that the system is heterodimensional: the light electrons extend over several In-rich agglomerations and see only the lateral InGaAs QW, i.e., are 2D, while the heavier holes are confined within the In-rich agglomerations, i.e., are 0D. This description is supported by single-particle effective-mass and eight-band k · p calculations. We suggest that the heterodimensional nature of nanoscale SML inclusions is fundamental to the ability of respective optoelectronic devices to operate efficiently and at high speed.

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Section: Introductionmentioning

confidence: 99%

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

et al. 2016

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“…The QDs show reduced amplified spontaneous emission as compared to bulk or quantum wells. This leads to reduced phase and amplitude noise and consequently to a reduced timing jitter [9,10]. An overview of mode-locked quantum dot lasers can be found in [11].…”

Section: Introductionmentioning

confidence: 99%

Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 15 μm

Heck¹,

Salumbides²,

Renault³

et al. 2009

Opt. Express

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Abstract:For the first time a detailed study of hybrid mode-locking in twosection InAs/InP quantum dot Fabry-Pérot-type lasers is presented. The output pulses have a typical upchirp of approximately 8 ps/nm, leading to very elongated pulses. The mechanism leading to this typical pulse shape and the phase noise is investigated by detailed radio-frequency and optical spectral studies as well as time-domain studies. The pulse shaping mechanism in these lasers is found to be fundamentally different than the mechanism observed in conventional mode-locked laser diodes, based on quantum well gain or bulk material. ©2009 Optical Society of America

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“…Some unique characteristics of QD lasers, such as the ultra-broad bandwidth, ultra-fast gain dynamics, easily saturated absorption, strong inversion, low alpha parameter and wide gain bandwidth, make them an ideal choice for semiconductor monolithic mode-locked lasers 18,19,20,21 . Also the 1.25-µm emission wavelength, which is transparent to Si waveguides and detectable by SiGe photodetectors, makes the InAs QD mode-locked lasers suitable for Si-based optoelectronic integrated-circuits 22,23 .…”

Section: Inas Dwell Mllsmentioning

confidence: 99%

Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates

et al. 2007

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In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-µm InAs dots-in-a-Well (DWELL), 1.25-µm InGaAs single quantum well (SQW), and 1.55-µm GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with subpicosecond RMS jitter, high pulse peak power (1W) and narrow pulse width (< 10 ps) were demonstrated in monolithic two-section InAs DWELL passive MLLs. With the 42% indium InGaAs SQW MLL, a record high-temperature performance for a monolithic passively mode-locked semiconductor laser is found. Compared with the typical operating range of the InAs DWELL devices (<60°C), the operation is in excess of 100 °C. The first 1.55-µm GaInNAsSb SQW MLL operates at a repetition rate of 5.8 GHz and has a 3-dB bandwidth of 170 kHz in the RF spectrum indicating respectable jitter.

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Direct modulation and mode locking of 1.3 μm quantum dot lasers

Cited by 65 publications

References 17 publications

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs

Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 15 μm

Monolithic passively mode-locked lasers using quantum-dot or quantum-well materials grown on GaAs substrates

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