Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth

Abstract

Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz. A low threshold current of 170μA, high differential efficiency of 0.53W∕A, and high modulation current efficiency factor of 14GHz∕mA are realized from a 1μm oxide aperture single-mode device with a side mode suppression ratio of >40dB and peak output power of >1mW. The lasers are also suitable for high temperature operation.

High-power semiconductor disk laser based on InAs∕GaAs submonolayer quantum dots

“…QDs grown using SML deposition also present a basis for ultrahigh-speed vertical-cavity surface-emitting lasers. 10 These devices show very good temperature stability as well as high gain and are based on SML QDs ͑Ref. 11͒ grown with the same SML deposition parameters as used for the present SML SDL devices.…”

Dots, QWISPs, and BIRDs

“…In particular, the InAs/GaAs submonolayer (SML) QD system is well-characterized [5], and is used in vertical cavity surface-emitting lasers (VCSELs) [6] and disk lasers [7]. The use of SML QDs instead of S-K QDs has the advantage that, whereas typically 2-3 monolayers of InAs is needed for a single layer of S-K QD formation, only 1/3-1/2 monolayer is needed for SML QD.…”

120 °C 20 Gbit/s operation of 980 nm single mode VCSEL

“…VCSELs are probably the most mature emitters for these applications [2]. 980 nm oxide confined devices with active layers consisting of highly strained InGaAs grown in the sub-monolayer growth mode have already demonstrated their high speed potential under small signal [3] and 20 Gbit/s large signal modulation at 85 °C [4]. Here we report on single mode devices operating even up to 120 °C.…”