Abstract:Single-mode vertical-cavity surface-emitting lasers based on dense arrays of stacked submonolayer grown InGaAs quantum dots, emitting near 980nm, demonstrate a modulation bandwidth of 10.5GHz. A low threshold current of 170μA, high differential efficiency of 0.53W∕A, and high modulation current efficiency factor of 14GHz ∕mA are realized from a 1μm oxide aperture single-mode device with a side mode suppression ratio of >40dB and peak output power of >1mW. The lasers are also suitable for high temp… Show more
“…QDs grown using SML deposition also present a basis for ultrahigh-speed vertical-cavity surface-emitting lasers. 10 These devices show very good temperature stability as well as high gain and are based on SML QDs ͑Ref. 11͒ grown with the same SML deposition parameters as used for the present SML SDL devices.…”
Section: High-power Semiconductor Disk Laser Based On Inas/ Gaas Submmentioning
An optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs∕GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4W cw at 1034nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications.
“…QDs grown using SML deposition also present a basis for ultrahigh-speed vertical-cavity surface-emitting lasers. 10 These devices show very good temperature stability as well as high gain and are based on SML QDs ͑Ref. 11͒ grown with the same SML deposition parameters as used for the present SML SDL devices.…”
Section: High-power Semiconductor Disk Laser Based On Inas/ Gaas Submmentioning
An optically pumped semiconductor disk laser using submonolayer quantum dots (SML QDs) as gain medium is demonstrated. High-power operation is achieved with stacked InAs∕GaAs SML QDs grown by metal-organic vapor-phase epitaxy. Each SML-QD layer is formed from tenfold alternate depositions of nominally 0.5 ML InAs and 2.3 ML GaAs. Resonant periodic gain from a 13-fold nonuniform stack design of SML QDs allows to produce 1.4W cw at 1034nm. The disk laser demonstrates the promising potential of SML-QD structures combining properties of QD and quantum-well gain media for high-power applications.
“…In particular, the InAs/GaAs submonolayer (SML) QD system is well-characterized [5], and is used in vertical cavity surface-emitting lasers (VCSELs) [6] and disk lasers [7]. The use of SML QDs instead of S-K QDs has the advantage that, whereas typically 2-3 monolayers of InAs is needed for a single layer of S-K QD formation, only 1/3-1/2 monolayer is needed for SML QD.…”
“…VCSELs are probably the most mature emitters for these applications [2]. 980 nm oxide confined devices with active layers consisting of highly strained InGaAs grown in the sub-monolayer growth mode have already demonstrated their high speed potential under small signal [3] and 20 Gbit/s large signal modulation at 85 °C [4]. Here we report on single mode devices operating even up to 120 °C.…”
Single mode 980 nm VCSEL show under 20 Gbit/s large signal modulation clearly open eyes without adjustment of the laser current and modulation voltage between 25 and 120 °C.
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