The endothelial glycocalyx is believed to play a major role in capillary permeability by functioning as a macromolecular barrier overlying the intercellular junction. Little is known about the functional attributes of the glycocalyx (i.e., porosity and permeability) or which constituents contribute to its overall structure-function relationship. In this report, we demonstrate the utility of fluorescence correlation spectroscopy (FCS) to measure albumin diffusion rates and concentration profiles above the cell surface and overlying the intercellular junctions of lung capillary endothelial cells. Albumin diffusion rates and concentration profiles were obtained before and after enzymatic digestion of the glycocalyx with pronase, heparanase, or hyaluronidase. The results suggest a structure interacting with albumin located from 1.0 to 2.0 microm above the cell membrane capable of reducing albumin diffusion by 30% while simultaneously increasing albumin concentration fivefold. Digestion of the glycocalyx with pronase or heparanase resulted in only modest changes in albumin diffusion and concentration profiles. Hyaluronidase digestion completely eliminated albumin-glycocalyx interactions. These data also suggest that hyaluronan is a major determinant for albumin interactions with the lung endothelial glycocalyx. Confocal images of heparan sulfate and hyaluronan confirm a cell-surface layer 2-3 mum in thickness, thus supporting FCS measurements. In summary, we report the first use of FCS to probe extracellular structures and further our understanding of the structure-function relationship of the lung microvascular endothelial glycocalyx.
Over the past few years, liquid-phase epitaxy (LPE) has become an established growth technique for the synthesis of HgCdTe. This paper reviews one of the most successful LPE technologies developed for HgCdTe, specifically, “infinite-melt” vertical LPE (VLPE) from Hg-rich solutions.Despite the very high Hg vapor pressure (> 10 atm) and the extremely low solubility of Cd in the Hg solution (< 10−3 mol%), this approach was believed to offer the best long-term prospect for growth of HgCdTe suitable for various device structures. Since the initial demonstration of LPE growth of HgCdTe layers from Hg solution in experiments conducted at SBRC in 1978, the VLPE technology has advanced to the point where epitaxial HgCdTe can now be grown for photoconductive (PC) and photovoltaic (PV) as well as monolithic metal-insulator-semiconductor (MIS) and high-frequency laser-detector devices with state-of-the-art performance in the entire 2–12 μm spectral region.A historical perspective and the current status of VLPE technology are reported. Particular emphasis is placed on the important role of the ther-modynamic parameters (phase diagram) and on control of stoichiometry (defect chemistry) and impurity doping (distribution coefficient) for growth of HgCdTe layers from Hg solution. Critical material characteristics, such as transport properties, minority-carrier lifetime, morphology and crystal structure, are also discussed. Finally, a comparison with the LPE technol-ogy using Te solutions, which has been the mainstay of the remainder of the IR community, is presented.
The title compound, C 13 H 18 N 2 OS, crystallizes as NH tautomer. The C5-C8(O)-N system tends to be coplanar with the phenyl ring [C4-C5-C8-O = 8.7 (4)°] because of some π-conjugation along the O-C8-C(Ph) system [C5-C8 = 1.448 (4) Å] and the O···H4 = 2.49Å attractive interaction. The molecules in the crystal are held together by van der Waals forces and an intermolecular N-H···O hydrogen bond.
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