Liquid-Phase Epitaxy of Hg<sub>1−x</sub>Cd<sub>x</sub>Te from Hg Solution: A Route to Infrared Detector Structures

Tung, Tse; Kalisher, M. H.; Stevens, A. P.; Herning, P. E.

doi:10.1557/proc-90-321

Cited by 50 publications

(4 citation statements)

References 81 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…LPE growth method offers,in comparison with bulk growth techniques, lower growth temperatures, shorter growth times, multilayered device structures, and better compositional homogeneity over large substrate areas. The versatility of LPE as a production tool for high performance device quality MCT epitaxial layers, with different Cd mole fractions and excellent compositional uniformity, is discussed in [16][17][18][19][20]. Today, detector arrays prepared from LPE based materials exhibit best performance, and majority of military IR applications use this technology.…”

Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

View full text Add to dashboard Cite

This Chapter covers recent advances in Short Wavelength Infrared (SWIR), Medium Wavelength Infrared (MWIR) and Long Wavelength Infrared (LWIR) materials and device technologies for a variety of defense and commercial applications. Infrared technology is critical for military and security applications, as well as increasingly being used in many commercial products such as medical diagnostics, drivers' enhanced vision, machine vision and a multitude of other applications, including consumer products. The key enablers of such infrared products are the detector materials and designs used to fabricate focal plane arrays (FPAs). Since the 1950s, there has been considerable progress towards the materials development and device design innovations. In particular, significant advances have been made during the past decade in the band-gap engineering of various compound semiconductors that has led to new and emerging detector architectures. Advances in optoelectronics related materials science, such as metamaterials and nanostructures, have opened doors for new approaches to apply device design methodologies, which are expected to offer enhanced performance and low cost products in a wide range of applications. This chapter reviews advancements in the mainstream detector technologies and presents different device architectures and discussions. The chapter introduces the basics of infrared detection physics and various infrared wavelength band characteristics. The subject is divided into individual infrared atmospheric transmission windows to address related materials, detector design and device performance. Advances in pixel scaling, junction formation, materials growth, and processing technologies are discussed. We discuss the SWIR band (1-3 microns) and address some of the recent advances in In-GaAs, SiGe and HgCdTe based technologies and their applications. We also discuss MWIR band that covers 3-5 microns, and its applications. Some of the key work discussed includes InSb, HgCdTe, and III-V based Strained Layer Super Lattice (SLS) and barrier detector tech

show abstract

Section: Liquid Phase Epitaxy (Lpe)mentioning

confidence: 99%

Advances in Infrared Detector Array Technology

Dhar¹,

Dat²,

Sood³

2013

Optoelectronics - Advanced Materials and Devices

View full text Add to dashboard Cite

show abstract

“…Several groups [1][2][3][4][5][6][7][8][9][10] have studied the behavior of as-grown and Hgannealed SSR material and the picture is one ofhighp-type concentrations in the as-grown state with low background fltype levels (l_lOXW l 4-cm 3 ) produced by low temperature ( < 300°C) Hg annealing which fills Hg vacancies. In SSR growth the material is equilibrated at a high temperature and the conduction is ptype, on cooling to ambient, due to Hg vacancies.…”

Section: A Undoped Material-electrical Behaviormentioning

confidence: 99%

A review of impurity behavior in bulk and epitaxial Hg1−xCdxTe

Capper

1991

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Extrinsic doping using elements which produce stability of electrical properties will become increasingly important in future infrared device structures based on Hg1−xCdxTe (MCT). This paper reviews the incorporation and activation of dopants in the most widely used bulk and epitaxial growth techniques. Stoichiometry at the growth temperature is demonstrated to be the critical factor which affects dopant activation. A number of factors, including stoichiometry, can affect the as-grown electrical properties of MCT and the importance of determining the type of conduction in the as-grown state, if successful extrinsic doping is to be accomplished, is stressed. The minimum criterion for confirmation of dopant activity is established as agreement between electrical and chemical data on the same low temperature Hg-annealed sample. At low concentrations of dopants, an additional requirement is to confirm the absence of other potential impurity dopants at equivalent levels. Most elements are active dopants in accordance with their relative position in the periodic table but several important exceptions exist, notably group V elements in Te-rich material. Slow-diffusing dopants are preferred and techniques are described which produce stable doped/undoped heterostructures, using As as the acceptor element in metalorganic vapour phase epitaxy growth. Data on dopant segregation behavior, in growth from liquids, acceptor ionization energies and minority carrier lifetimes are presented and their importance is discussed. Ionization energies can be used to differentiate doped from undoped material, providing the degree of compensation is known. Doping using extrinsic acceptors has been shown to improve minority carrier lifetimes in material grown by certain techniques but is unsuccessful in other types of material. Some recent data on annealing undoped Te-rich liquid phase epitaxial material will be presented which suggests that higher minority carrier lifetimes can be achieved purely by defect control.

show abstract

“…Mitra et al using a similar measurement technique, have reported that for the same carrier concentration longer lifetimes are obtained by As doping with TBAs than in vacancy doped material. 12 However, the lifetimes did not reproduce the long lifetimes measured in As doped Hg-rich LPE layers of Tung et al 1 Their data show that for Hg 1Ϫx Cd x Te with similar compositions the lifetimes of their LPE material are within a factor of two of the radiative lifetime. The MOCVD data compare favorably with the LPE data of Tung, and for the lower doping levels, the lifetimes are also at the radiative limit, but drop off at higher doping levels.…”

mentioning

confidence: 91%