Metal incorporation into silicon substrates, and thermal stability of alternate gate dielectric candidates HfSixOy and ZrSixOy films after aggressive thermal annealing are reported. Considerable Zr incorporation is observed after furnace and rapid thermal annealing. No detectible Hf incorporation is observed for HfSixOy films annealed with the same conditions as the ZrSixOy films. Sputter deposited Hf silicate films showed superior thermal stability compared with chemical vapor deposited Zr silicate films. An alternate approach to obtain sub-nm resolution depth profiling of impurities in Si is also reported. Device performance associated with Zr incorporation into the channel is also discussed.
We present detailed B penetration studies from B-doped polysilicon through alternate gate dielectric candidate HfSixOy films. No detectible B penetration is observed for annealing times as long as 20 s after 950 °C. Considerable B incorporation into the Si substrate is observed for annealing temperatures higher than 950 °C. By modeling the B depth profiles, we calculated the B diffusivities through HfSixOy to be higher than the corresponding diffusivities for SiO2. B diffusion through grain boundaries after HfSixOy crystallization is proposed to be responsible for the enhanced B diffusivity observed.
Structural and surface potential characterization of annealed HfO 2 and ( HfO 2 ) x ( SiO 2 ) 1 -x films Relationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemicalvapor-deposited Hf-O films on Si J. Appl. Phys. 95, 5042 (2004); 10.1063/1.1689752Growth and effects of remote-plasma oxidation on thin films of HfO 2 prepared by metal-organic chemical-vapor deposition J.
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