High-quality p - type Hg1−xCdxTe prepared by metalorganic chemical vapor deposition

Abstract

Articles you may be interested in ptype doping of metalorganic chemical vapor depositiongrown HgCdTe by arsenic and antimony

Progress in MOVPE of HgCdTe for advanced infrared detectors

“…11,27,43 Unlike TBAsH 2 and PhAsH 2 , DMAAs has no As-H bonds and it is therefore expected that As-H complexes will not be incorporated in the As-doped films. 11,27,43 Unlike TBAsH 2 and PhAsH 2 , DMAAs has no As-H bonds and it is therefore expected that As-H complexes will not be incorporated in the As-doped films.…”

Progress in MOCVD growth of HgCdTe heterostructures for uncooled infrared photodetectors

“…Although As-H complexes are expected to be electrically neutral, they are likely to be recombination centres in HgCdTe and are probably an important factor in the lower lifetimes observed in As-doped films grown with the TBAsH 2 and PhAsH 2 precursors. Unlike TBAsH 2 and PhAsH 2 , dimethylaminoarsenic (DMAAs) -another precursor used for p-type HgCdTe doping, [9,25,26] has no As-H bonds and it is therefore expected that As-H complexes will not be incorporated in the As-doped films [27]. Fig.…”

“…It was suggested [25] that As-doping of CdTe with AsH 3 causes the incorporation of As-H pairs in addition to As. It is likely that As-H pairs are incorporated also with TBAsH 2 and PhAsH 2 precursors since they are substituted AsH 3 in MOCVD HgCdTe growth.…”

Microscopic Origin of Electrical Compensation in Arsenic-Doped HgCdTe by Molecular Beam Epitaxy: Density Functional Study

“…The configuration of arsenic defects has been theoretically studied by Grein et al for As 4 and As 2 10 in specific configurations and our previous work for As 1 and V Hg . 11,12 With the goal of better understanding the microscopic nature of the arsenic dopants, we further analyzed the configuration of the arsenic complex defects in the form of arsenic (Received October 13, 2006; accepted February 9, 2007; published online May 1, 2007) tetramer (As t ), arsenic dimer (As d ), and arsenic singlet (As s ) in this work.…”

“…In this way, success in achieving p-type doping of HgCdTe using arsenic dopant has been reported by several groups. [3][4][5][6][7] On the other hand, when a noncracking arsenic source is used for doping, it is expected that the arsenic flux is predominantly in the form of As 4 molecules. Under the typical low-temperature conditions of MBE growth, the incident As 4 molecules are initially physisorbed as tetramers on the growth surface.…”