Progress in MOVPE of HgCdTe for advanced infrared detectors

Mitra, P.; Case, F. C.; Reine, M. B.

doi:10.1007/s11664-998-0007-5

Cited by 45 publications

(24 citation statements)

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As we can see, the R 0 A product is about one order of magnitude higher for structures doped with TDMAAs than those doped with AsH 3 in the wavelength range from 3 µm to 7 µm. This is confirmation of presumption suggested by Mitra et al [2] about unfavourable incorporation of As-H pairs from AsH 3 into growing HgCdTe epilayers. Increase of the R 0 A product is consequence of increasing minority carrier lifetime due to using TDMAAs precursor.…”

Section: Growth and Characterization Of Hgcdte Structuressupporting

confidence: 91%

See 1 more Smart Citation

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

et al. 2010

View full text Add to dashboard Cite

One of the key factor which determine HgCdTe photodiode quality is acceptor doping efficiency. This paper presents significant progress made over the past three years in development of acceptor doping technology in metalorganic chemical vapour deposition HgCdTe photovoltaic detectors. High acceptor doping is required for P + -contact layers, whereas low doping is necessary for p-type absorbing base layer. Previously, AsH3 precursor was used as an acceptor dopant. This precursor is partially incorporated as electrically neutral As-H pairs, which are likely to be recombination centres in HgCdTe and in consequence influence on the carriers lifetime lowering. Substituting of AsH3 by TDMAAs resulted in higher carrier lifetimes and thereby about one order of magnitude higher R0A product of HgCdTe photodiodes in temperatures close to 230 K.

show abstract

Section: Growth and Characterization Of Hgcdte Structuressupporting

confidence: 91%

“…Mitra et al [2] suggested that As doping of CdTe with AsH 3 , causes the incorporation of As-H pairs in addition to As. These As-H complexes are expected to be electrically neutral but they are likely to be recom- bination centers in HgCdTe.…”

Section: Introductionmentioning

confidence: 99%

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

et al. 2010

View full text Add to dashboard Cite

show abstract

“…1,11 The acceptor-dopant source was tris-di-methyl amino arsine (DMAAs) and the donor-dopant source was iso-butyl iodide (IBI). Figure 4 shows the As depth profile shows well-defined transitions that help define the junction depth.…”

Section: Assessment Resultsmentioning

confidence: 99%

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Maxey

Camplin

Guilfoy

et al. 2003

Journal of Elec Materi

View full text Add to dashboard Cite

“…Development of advanced epitaxial techniques such as molecular beam epitaxy (MBE) 8 and metalorganic chemical vapor deposition (MOCVD) 9 has enabled construction of complex HgCdTe heterostructure-based IR detectors for high-operating-temperature (HOT) conditions. 4 The importance of research in the field of HOT detectors results from the possibility of cost reduction in production of infrared devices and their improved operability, thus extending their applications in industry, science, medicine, ecology, and especially portable applications, where cryogenic cooling is impossible or strongly limited.…”

Section: Introductionmentioning

confidence: 99%

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Kopytko

Kębłowski

Madejczyk

et al. 2017

Journal of Elec Materi

View full text Add to dashboard Cite

Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength infrared HgCdTe heterostructure photodiodes exhibit subnanosecond time constants while operating under reverse bias. However, nonequilibrium devices exhibit excessive low-frequency 1/f noise that extends up to MHz range, representing a severe obstacle to their widespread application. Present efforts are focused on zero-bias operation of photodiodes. Unfortunately, the time constant of unbiased photodiodes is still at the level of several nanoseconds. We present herein a theoretical investigation of device design for improved response time and detectivity of long-wavelength infrared HgCdTe photodiodes operating at 230 K in zero-bias mode. The calculation results show that highly doped p-type HgCdTe is the absorber material of choice for fast photodiodes due to its high electron diffusion coefficient. The detectivity of such a device can also be optimized by using absorber doping of N A = 1 9 10 17 cm À3 . Reduction of the thickness is yet another approach to improve the device response. Time constant below 1 ns is achieved for an unbiased photodiode with absorber thickness below 4 lm. A tradeoff between the contradictory requirements of achieving high detectivity and fast response time is expected in an optically immersed photodiode with very small active area.

show abstract

Progress in MOVPE of HgCdTe for advanced infrared detectors

Cited by 45 publications

References 52 publications

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Influence of TDMAAs Acceptor Precursor on Performance Improvement of HgCdTe Photodiodes

Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Contact Info

Product

Resources

About