Comprehensive research of the structural, optical and electrical properties of a PbTe/CaF 2 /Si(1 1 1) epitaxial system after anodic electrochemical treatment in a Norr solution electrolyte with a low current density of 6 mA cm −2 was carried out. It is shown that the anodizing results in the increase of the band gap and resistivity and in the decrease of the refractive index of lead telluride. Using secondary ion mass spectrometry, a specific change of the C, K, H element distribution in depth of PbTe films after electrochemical treatment was detected. It is demonstrated that the set of presented experimental results can be explained from the standpoint of the formation of a mesoporous structure of lead telluride with a porosity value of about 50%. The effective radius of PbTe nanoparticles is equal to 13 nm. Triple-crystal x-ray diffractometry results analysis showed that the pores have spherical voids with an average dimension of 40 nm.
On the basis of statistical dynamic theory experimental results are analyzed of X-ray double-crystal diffraction from laser disturbed near-surface monocrystal Si layers induced by millisecond impulse irradiation. These investigations are carried out on silicon monocrystals (reflections (1 1 l), CuK,,irradiation) on the basis of double-crystal undispersed scheme (n, -n). The disturbance of the near-surface layer is caused by multiple laser irradiation. Numerical calculations are made for the model of a disturbed layer with a constant lattice deformation gradient and randomly stress deformations of statistically disturbed microdefects with variation of static Debye-Waller factor, correlation length, maximum lattice deformation, and disturbed layer thickness. Ha OCHOBe CTaTUCTUWCKOE nHHaMII%CKO% TeOpUIl aHaJIII3HpyIoTCR 3KCnePkiMeHTaJIbHbIe pe3yJIbTaTbI AByXKpHCTaJIbHO% PeHTreHOBCKO% AH@PaKTOMCTPMH H a HapyUIeHHbIX JIa3epHbIM MHJIJIHCeKyHAHbIM HMIIYJIbCHbIM H3JIyYeHIIeM npUIIOBepXHOCTHHbIX CJIORX MOHOKpIICTaJInOB KpeMHHR. 3KCIIepHMeH-TmbHbIe IlCCJIenOBaHHR IIpOBOnHJIHCb H a MOHOKPHCTaJIJIaX KpeMHHR (OTpaXeHIIe (1
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