X-ray diffractometry diagnosis of laser diffusion of aluminum into silicon

Bushuev, V. A.; Petrakov, A. P.

doi:10.1134/1.1259685

Cited by 4 publications

(4 citation statements)

References 7 publications

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“…This is confirmed by the presence of additional, displaced intensity maxima on rocking curves (Fig. 1) and the appearance of maxima of reduced intensity function $P(\theta ) = AI_{\rm M} \theta ^2$ 12 in the region of angles θ < 0 (Fig. 2) ( I M is the intensity of the main maximum on the three‐crystal X‐ray diffractometry curves obtained at different fixed sample rotation angles θ in the mode of scanning by analyzer).…”

Section: Experimental Results and Their Discussionmentioning

confidence: 56%

Structural changes in Si crystals exposed to chemical etching and ion implantation

Фодчук

Zaplitnyy

Kazemirskiy

et al. 2009

Physica Status Solidi (a)

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Results of X‐ray diffraction studies on structural changes in Si crystals caused by chemical etching for 40 s in HF, HNO3 solution and phosphorus‐ion implantation with the energy E = 100 keV and dose D = 8 × 1014 cm−2 are represented. Two‐ and three‐crystal X‐ray diffractometry methods are used for a quantitative assessment of structural changes occurring in the near‐surface crystal layers. Analysis of experimental rocking curves was made with the use of different approaches developed on the basis of kinematic and dynamic theory of X‐ray scattering in the imperfect crystals. A model of possible system of structural defects in the near‐surface silicon layers modified by chemical etching and ion implantation is proposed. The model accounts for the availability of respective sizes and concentrations of spherical and disc‐shaped cluster formations, dislocation loops.

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Section: Experimental Results and Their Discussionmentioning

confidence: 56%

Structural changes in Si crystals exposed to chemical etching and ion implantation

Фодчук

Zaplitnyy

Kazemirskiy

et al. 2009

Physica Status Solidi (a)

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show abstract

“…Because of the high energy and short duration of the laser heating, the process refers to a nonequilibrium diffusion. For example, the diffusion coefficient of aluminum in silicon under laser irradiation bringing the substrate at 1000°C has been estimated at about 7×10 − 12 cm 2 /s, while it is only 6×10 −19 cm 2 /s in the case of an isothermal diffusion [9]. Diffused atoms occupy positions at the silicon lattice sites.…”

Section: Resultsmentioning

confidence: 98%

Laser fired back contact for silicon solar cells

et al. 2008

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“…It is well known that with the consideration of vertical divergence in the TCD method, the intensity of the diffuse scattering decreases according to the following law: ∼ 1 q k x , where the index k is determined by the type of the defects. For the unanodized sample, experimental points are positioned (figure 3) along line 1 where k = 2, which corresponds with the presence of threading dislocations in the initial films [20]. After the anodizing, the experimental points are positioned on lines 2 and 3 where k = 1 and k = 3, respectively.…”

Section: Pbte Films' Investigations By High-resolution X-ray Diffract...mentioning

confidence: 99%

“…Generally, such a situation is typical for the clasters and dislocation loops. The area where k = 1 at low q x describes so-called Huang scattering q x < 1 r , while k = 3 at high q x values corresponds to the Stokes-Wilson region q x > 1 r , where r is the defect radius [20]. The angular position of the diffusive maximum expels the presence of dislocation loops [21].…”

Section: Pbte Films' Investigations By High-resolution X-ray Diffract...mentioning

confidence: 99%

Formation of porous nanostructured lead telluride films by an anodic electrochemical etching method

Zimin¹,

Bogoyavlenskaya²,

Buchin³

et al. 2009

Semicond. Sci. Technol.

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Comprehensive research of the structural, optical and electrical properties of a PbTe/CaF 2 /Si(1 1 1) epitaxial system after anodic electrochemical treatment in a Norr solution electrolyte with a low current density of 6 mA cm −2 was carried out. It is shown that the anodizing results in the increase of the band gap and resistivity and in the decrease of the refractive index of lead telluride. Using secondary ion mass spectrometry, a specific change of the C, K, H element distribution in depth of PbTe films after electrochemical treatment was detected. It is demonstrated that the set of presented experimental results can be explained from the standpoint of the formation of a mesoporous structure of lead telluride with a porosity value of about 50%. The effective radius of PbTe nanoparticles is equal to 13 nm. Triple-crystal x-ray diffractometry results analysis showed that the pores have spherical voids with an average dimension of 40 nm.

show abstract

X-ray diffractometry diagnosis of laser diffusion of aluminum into silicon

Cited by 4 publications

References 7 publications

Structural changes in Si crystals exposed to chemical etching and ion implantation

Structural changes in Si crystals exposed to chemical etching and ion implantation

Laser fired back contact for silicon solar cells

Formation of porous nanostructured lead telluride films by an anodic electrochemical etching method

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