The excitation and decay mechanisms of the Yb3+ intra-4f-shell emission are studied in n-type Mow-grown and p-type LPE grown InP:Yb layers by photoconductivity measurements, time-resolved photoluminescence, photoluminescence excitation and emission spectroscopy. Assuming a pseudodonor or pseudo-acceptor-like character of the isoelectronic Yb3+ T,, centre the temperature dependences of the 41-shell transition intensity and lifetime can be consistently explained. Models for the excitation and decay processes of the Yb3+ photoluminescence are proposed.

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Dimethyl (3-dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30 °C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30 °C. The growth temperature was varied between 580 and 660 °C. Hall measurements revealed good electrical data with carrier mobilities up to 49 900 cm2 /V s at 77 K. Temperature-dependent photoluminescence experiments confirmed these results and indicated that zinc was the main residual acceptor impurity.

Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5-C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10−9–10−7). In photoluminescence experiments they showed strong Yb3+-4f emission. The layers were further characterized by Hall measurements and secondary-ion mass spectroscopy. In order to obtain n-type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.

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