Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

Hostalek, M.; Pohl, L.; Brauers, A.; Balk, P.; Frese, V.; Hardtdegen, H.; Hövel, R.; Regel, G.K.; Molassioti, A.; Moser, M.; Scholz, F.

doi:10.1016/0040-6090(89)90861-4

Cited by 22 publications

(2 citation statements)

References 17 publications

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“…Under steady-state conditions pure TMG diluted in an inert carrier gas starts to pyrolyse above 350 °C only . The same is true for Ga(CH 2 t Bu) 3 , Ga(CH 2 SiMe 3 ), and R 2 Ga[(CH 2 ) 3 NMe 2 ]. , The homogeneous decomposition of TEG however starts roughly 100 °C earlier, around 250 °C, because of the lower activation energy of the β-H elimination mechanism. According to Kaesz et al.…”

Section: Resultsmentioning

confidence: 77%

“…31 The same is true for Ga(CH 2 t Bu) 3 , 32 Ga(CH 2 SiMe 3 ), and R 2 -Ga[(CH 2 ) 3 NMe 2 ]. 33,34 The homogeneous decomposition of TEG however starts roughly 100 °C earlier, around 250 °C, because of the lower activation energy of the β-H elimination mechanism. According to Kaesz et al a molar excess of at least 5-10 of TEG over Cp(CO) 2 Co is necessary to grow stoichiometric β-Co 0.50 Ga 0.50 from those two sources under atmospheric pressure in the presence of hydrogen.…”

Section: Resultsmentioning

confidence: 99%

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Comparative Study of the Metal Organic Chemical Vapor Deposition of β-CoGa Thin Films from Dialkylgallium Tetracarbonylcobaltate Single-Source Precursors

Fischer

Miehr

1996

Chem. Mater.

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The volatile heterodinuclear organometallic compounds L(CO) 3 Co-GaR 2 (Do) and L(CO) 3 -Co-Ga[(CH 2 ) 3 NR 1 2 ](R) (R ) H, CH 3 , C 2 H 5 , CH 2 t Bu, CH 2 SiMe 3 ; Do ) THF, NMe 3 , NC 7 H 13 ; L ) CO, PMe 3 , PPh 3 ; R 1) CH 3 ; C 2 H 5 ; 1-10 were studied as single molecule precursors for the deposition of binary Co/Ga alloy thin films by MOCVD using a horizontal hot-walled reactor in the absence of carrier gases in vacuo. The metal concentrations of the thin films were found to depend on the substrate temperature and the type of substituents at the gallium atom. Cobalt-rich films were typically deposited below 250 °C. The 1:1 ratio of the metals in the precursor compounds is retained above 300-350 °C. Typical growth rates were between 0.1 and 1 µm h -1 at ∼1 Pa total pressure. The best results were obtained with the precursor compound (CO) 4 Co-GaEt 2 (NMe 3 ) (5a). The grown films showed impurity levels of C, N, and O close to the detection limit of the used analytical methods (e0.5 at. % by AES). The thin-film resistivities were around 150((30) µΩ cm in these cases. At substrate temperatures below 300 °C, alkyl-transfer reactions are important, which are likely to be surface driven. These processes generate volatile and thermally stable gallium alkyls GaR 3 , which pass through the reaction zone. This mechanism explains the gallium deficiency of the Co 1 Ga 1-x films grown at low substrate temperatures. Other byproducts were mainly unsaturated hydrocarbons (e.g., ethene or H 2 CdCHCH 2 NMe 2 ) and nonfragmented donor ligands Do (e.g., THF, NMe 3 ). The films were routinely examined ex situ by SEM-EDX and AUGER electron spectroscopy. Films grown on various substrates (quartz, GaAs, silicon) were structurally characterized by X-ray diffraction showing the cubic β-CoGa as the only detectable crystalline phase in the case of GaAs(100) and quartz substrates (ca. 300 °C substrate temperature). At higher deposition temperatures (350-380 °C for GaAs and 400-450 °C for silicon) interfacial solid-state reactions occurred to give various other phases such as R-Co 1-δ Ga δ , β-CoGa, CoGa 3 , CoAs, and Co 2 Si.

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Section: Resultsmentioning

confidence: 77%

Section: Resultsmentioning

confidence: 99%

Comparative Study of the Metal Organic Chemical Vapor Deposition of β-CoGa Thin Films from Dialkylgallium Tetracarbonylcobaltate Single-Source Precursors

Fischer

Miehr

1996

Chem. Mater.

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Precursor Chemistry

1997

CVD of Compound Semiconductors

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Intramolecularly stabilized organoaluminium, ‐gallium and ‐indium derivatives crystal structures of {o‐[(dimethylamino)methyl]phenyl}dimethylgallium and {o‐[(diethylamino)methyl]phenyl}dimethylindium

et al. 1990

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Intramolecularly stabilized four‐coordinated organoaluminium, ‐gallium, and‐indium compounds R2MC6H4CH2NR'2‐(2) (1–7), Me2MCH2C6H4NMe2‐(2) (8, 9), Me2MCH2C6H4CH2‐NMe2‐(2) (10, 11), and Me2GaC6H4NMe2 (12) have been synthesized from O ‐[(dialkylamino)methyl]phenyllithium, [O ‐(dimethylamino)phenyl]methyllithium, {O ‐[(dimethylamino)methyl]phenyl}methyllithium and O ‐(dimethylamino)phenyllithium, respectively. The 1H‐, 13CNMR, and mass spectra of the new compounds and the X‐ray crystal structures of 2 and 7 are reported and discussed.

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Novel organometallic starting materials for group III–V semiconductor metal-organic chemical vapour deposition

Cited by 22 publications

References 17 publications

Comparative Study of the Metal Organic Chemical Vapor Deposition of β-CoGa Thin Films from Dialkylgallium Tetracarbonylcobaltate Single-Source Precursors

Comparative Study of the Metal Organic Chemical Vapor Deposition of β-CoGa Thin Films from Dialkylgallium Tetracarbonylcobaltate Single-Source Precursors

Precursor Chemistry

Intramolecularly stabilized organoaluminium, ‐gallium and ‐indium derivatives crystal structures of {o‐[(dimethylamino)methyl]phenyl}dimethylgallium and {o‐[(diethylamino)methyl]phenyl}dimethylindium

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