InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(M e C p)3

Abstract

Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5-C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10−9–10−7). In photoluminescence experiments they showed strong Yb3+-4f emission. The layers were further characterized by Hall measurements and secondary-ion mass spectroscopy. In order to obtain n-type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.

Excitation and De-Excitation Mechanisms of Rare-Earth Ions in III-V Compounds: Optically Detected Microwave-Induced Impact Ionization of Yb Dopant in Inp

“…In contrast to this, Yb-doped InP grown by metalorganic chemical vapor deposition (MOCVD) showed n-type conductivity [3,4], even for Yb concentrations much higher than those obtained in LPE-grown material. Synthesized InP:Yb epilayers were also found to be n type [5].…”

“…In the MOCVD-growth process zone-refined trimethylindium -triethylphosphine (Me 3 InPEt3), phosphine, and tri(methyl-cyclopentadienyl)ytterbium (Yb(MeCp) 3 ) were used as the In, P, and Yb sources, respectively. More details on the growth process can be found elsewhere [4,23]. The epitaxial InP:Yb layer was grown on a semi-insulating Fe-doped InP substrate; the layer thickness was 3 pm.…”

CVD of metal organic and other rare‐earth compounds

“…Sulphur and ytterbium doping was effected concurrently, the former by introduction of an H2S flow similar to that used for doping InP with S alone.& Electrical properties were similar for samples doped with either Yb(CsH,),s or Yb(C,H4Me),. 46 Similar photoluminescence (PL) spectra were observed between samples doped with Ln(C,H,)24s or Ln(CsH4Me)3.4S. 46 Sharp lines attributable to f -f transitions were generally ob~erved'.~"~~ and the intensity has been related both to the dopant concentration (e.g.…”

“…46 Similar photoluminescence (PL) spectra were observed between samples doped with Ln(C,H,)24s or Ln(CsH4Me)3.4S. 46 Sharp lines attributable to f -f transitions were generally ob~erved'.~"~~ and the intensity has been related both to the dopant concentration (e.g. Refs 5, 45) and to the gas-phase mole fraction.& However, the intensity of f+f emissions for Nd-doped GaAs are nearly concentration-independent .48 For a constant AsH,/Et,Ga mole ratio (30:l) in the feedstock, considerable sharpening of the photoluminescence spectra was achieved by lowering the deposition tem erature progressively from 550 to 500 to 460°C.…”

“…Similar deposition temperaturedependence of PL spectra has been found for GaAs:Er grown by molecular-beam epitaxy. 46 Vapour pressures have also been determined for the tris(isopropylcyc1opentadienyl)lanthanoids, Ln(CsH4Pr')7 (Ln = La, Pr or Nd)," and these are markedly more volatile than Ln(CjH4R)? (R = Me or H).…”