Abstract-Performance enhancements of up to 170% in drain current, maximum transconductance, and field-effect mobility are presented for nMOSFETs fabricated with strained-Si channels compared with identically processed bulk Si MOSFETs. A novel layer structure comprising Si/Si 0 7 Ge 0 3 on an Si 0 85 Ge 0 15 virtual substrate (VS) offers improved performance advantages and a strain-compensated structure. A high thermal budget process produces devices having excellent on/off-state drain-current characteristics, transconductance, and subthreshold characteristics. The virtual substrate does not require chemical-mechanical polishing and the same performance enhancement is achieved with and without a titanium salicide process.
Inch/Pound to SI Multiply By To obtain Length inch (in.) 25.4 millimeter (mm) foot (ft) 0.3048 meter (m) Area square mile (mi 2) 2.590 square kilometer (km 2) Volume cubic foot (ft 3) 0.02832 cubic meter (m 3) Flow rate cubic foot per second (ft 3 /s) 0.02832 cubic meter per second (m 3 /s) Temperature in degrees Celsius (°C) may be converted to degrees Fahrenheit (°F) as follows: °F=(1.8×°C)+32 Temperature in degrees Fahrenheit (°F) may be converted to degrees Celsius (°C) as follows: °C=(°F-32)/1.8 Vertical coordinate information is referenced to the North American Vertical Datum of 1988 (NAVD 88). Horizontal coordinate information is referenced to the North American Datum of 1983 (NAD 83).
Measurements of low frequency noise in Si and Si0.64Ge0.36 p-channel metal oxide semiconductor field effect transistors are compared with a model of carrier number fluctuations due to tunneling into an energy independent density of oxide trap states (Nox) and associated mobility fluctuations. The failure of the model to explain the data leads us to suggest that reduced noise in the SiGe device as compared to Si is primarily associated with an energy dependence of Nox and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to the Si control.
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