We report on AlGaN multiple-quantum-well separate confinement laser heterostructures grown by plasma-assisted molecular-beam epitaxy directly on c-sapphire at low temperatures (<800 °C). Threading dislocation density was reduced down to 109–1010 cm−2 owing to both intentionally introduced strained AlGaN/AlN superlattices and self-organized blocking structures in the AlGaN step-graded buffer layers. The quantum wells were fabricated by a submonolayer digital alloying technique. Calculations of the optical gain and confinement in the optically pumped laser structures yielded its optimum design comprising an asymmetric waveguide. Lasing at 303 nm with the relatively low threshold excitation density of 0.8 MW/cm2 at 295K has been achieved.

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