InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500–650 nm range

Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates

“…Using XRD data and independent estimations based on the growth rate measurements by the laser interferometry technique [4], the average In-content in this layer has been estimated to be as high as 0.3-0.4. These data indicate unambiguously the relatively low values of a In for the InGaN layers grown on the GaN MPVPE template [3].…”

“…We have found recently that the incorporation efficiency of In (a In ) during the InGaN MBE growth on the MOVPE templates is several times lower than in the case of using the GaN buffer layer grown by PAMBE on c-sapphire [3]. Therefore, the possibilities to increase a In in InN-rich InGaN layers grown on GaN MOVPE are also studied.…”

AlGaN quantum well structures for deep-UV LEDs grown by plasma-assisted MBE using sub-monolayer digital-alloying technique

“…To control the AlGaN growth a phenomenological approach was used based on simultaneous in-situ measurements of a laserbeam interference (l=660 nm) and reflection high-energy electron diffraction (RHEED) [10]. Chemical composition of the AlGaN layers was determined by an electron-probe microanalysis (EPMA) and polarized Raman spectroscopy using an Ar + laser (l=488 nm) as an excitation source [11].…”

Electrical properties of Mg‐doped GaN and AlxGa1–xN

“…The GaN:Mg layers with the thickness ranging within 250 -800 nm were grown under the same growth rate and III/N ratio at two temperatures 700 and 650°C, the latter being the maximum T S allowing PA MBE growth of highefficiency InGaN/GaN MQW emitting at λ > 520 nm [16]. Mg beam equivalent pressure (BEP) was varied in between (2 -7)×10 -9 Torr.…”