state materials that involve electronic conductivity. However, Chap. 7 does cover the electrochemistry of mixed ionic-electronic conduction where the electronic conductivity component can vary from very low to very high. An interesting formula index shows that halogen/oxide compounds are of dominant interest with particular emphasis on sodium aluminates and Compounds of copper, lithium, and silver. There is a good chapter on the theoretical aspects of solid electrolytes which sets the tone for the subsequent four chapters which deal with specific materials, e.g.,/~-aluminas, halogenides. The chapters are well referenced covering the literature through 1976. For a small book of 226 pages, there is a lot of information which will be of substantial help to workers in this field.
The electrical resistivity of polycrystalline silicon films has been studied as a function of doping concentration and heat treatment. The films were grown by the chemical vapor decomposition of silane on oxidized silicon wafers. The resistivity of the as−deposited films was widely scattered but independent of dopant atom concentration at the lightly doped levels and was strong function of dopant level in the more heavily doped regions. Postdeposition heat treatments in an oxidizing atmosphere remove scatter in the data. The resultant resistivity for dopant levels less than 1016 atoms/cm3 was approximately equal to that of intrinsic silicon. In the next 2 orders of magnitude increase in dopant level, the resistivity dropped 6 orders of magnitude. A model, based on high dopant atom segregation in the grain boundaries, is proposed to explain the results.
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