Resistivity of Doped Polycrystalline Silicon Films

Fripp, A. L.; Slack, L. H.

doi:10.1149/1.2403390

Cited by 57 publications

(15 citation statements)

References 2 publications

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“…If we assume the grains are cubes, Q,I NSi for silicon can be given by 1.62X 1O- 7 The solid lines are for N = 5 X 1O'9cm-3, while the behavior for N = 5 X 10 2°c m-3 is also shown for the smallest grain size (dashed line). If we assume the grains are cubes, Q,I NSi for silicon can be given by 1.62X 1O- 7 The solid lines are for N = 5 X 1O'9cm-3, while the behavior for N = 5 X 10 2°c m-3 is also shown for the smallest grain size (dashed line).…”

Section: Theorymentioning

confidence: 99%

“…[1][2][3][4][5][6][7][8][9] These investigations have shown that electrical properties of polycrystalline silicon are markedly different from those of single-crystal silicon. [1][2][3][4][5][6][7][8][9] These investigations have shown that electrical properties of polycrystalline silicon are markedly different from those of single-crystal silicon.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Dopant segregation in polycrystalline silicon

Mandurah¹,

Saraswat²,

Helms³

et al. 1980

Journal of Applied Physics

377

104

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Dopant segregation at grain boundaries in poly crystalline silicon has been investigated. Arsenic, phosphorus, and boron were ion implanted into low-pressure, chemically-vapor-deposited polycrystalline-silicon films. All films were then annealed at 1000·C for 1 h, and some were subsequently further annealed at 800, 850, or 900 DC for 64, 24, or 12 h, respectively. For phosphorus and arsenic the room-temperature resistivity of the films was found to be higher after annealing at lower temperatures. By successively annealing the same sample at lower and higher temperatures, the resistivity would repeatedly increase and decrease, indicating reversible dopant segregation at the grain boundaries. Hall measurements were used to estimate the number of active dopant atoms within the grains and the number of atoms segregated at the grain boundaries as a function of annealing temperature. A theory of segregation in systems of small particles has been developed. Using this theory, the heat of segregation of arsenic and phosphorus in poly crystalline silicon was calculated. For boron no appreciable segregation was observed.

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Section: Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dopant segregation in polycrystalline silicon

Mandurah¹,

Saraswat²,

Helms³

et al. 1980

Journal of Applied Physics

377

104

View full text Add to dashboard Cite

show abstract

“…Until recently, these films have been generally deposited in atmosphericpressure, cold-wall reactors, in which the silicon substrates lie fiat on an externally heated susceptor. The electrical properties of such films have been reported by many researchers (4)(5)(6)(7)(8).…”

Section: Hewlett-packard Laboratories Palo Alto Calilornia 94304mentioning

confidence: 99%

Phosphorus Doping of Low Pressure Chemically Vapor‐Deposited Silicon Films

Mandurah

Saraswat

Kamins

1979

J. Electrochem. Soc.

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“…At higher B r , some boron atoms may segregate at the grain boundary in electrically inactive sites, resulting in a decrease of d and E a . [38][39][40] The increased amorphous tissue caused change in the FTIR peak, shifting from MSMs to LSMs, and increased HSMs.…”

Section: Effect Of the Diborane (B 2 H 6 ) Onmentioning

confidence: 99%

A Novel Method to Make Boron-Doped Microcrystalline Silicon Thin Films with Optimal Crystalline Volume Fraction for Thin Films Solar Cell Applications

Shin¹,

Park²,

Kim³

et al. 2014

j nanosci nanotechnol

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Highly conducting boron-doped microcrystalline silicon (p-type μc-Si:H) thin films have been prepared by radio frequency plasma-enhanced chemical-vapor deposition (RF-PECVD). In this work, the effects of hydrogen dilution, doping ratio, plasma power, deposition pressure and substrate temperature on the growth and the properties of boron-doped microcrystalline silicon (p-type μc-Si:H) thin films are investigated. The electrical, chemical and structural properties are improved with increasing crystallite, which depends on the plasma conditions. For various plasma parameters, the crystalline volume fraction (X(c)), dark conductivity (σ(d)), activation energy (E(a)), hydrogen content (C(H)), surface roughness (S(r)), and micro void fraction (R*) were measured, and they were 0-72%, 4.17-10(-4) S/cm-1.1 S/cm, 0.041-0.113 eV, 3.8-11.5 at.%, 3.2 nm-12.2 nm, and 0.47-0.80, respectively. The film with R* of 0.47 and C(H) of about 5 at.% belonged to a region of low disorder, and acted as a good passivation layer.

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Resistivity of Doped Polycrystalline Silicon Films

Abstract: not Available.

Cited by 57 publications

References 2 publications

Dopant segregation in polycrystalline silicon

Dopant segregation in polycrystalline silicon

Phosphorus Doping of Low Pressure Chemically Vapor‐Deposited Silicon Films

A Novel Method to Make Boron-Doped Microcrystalline Silicon Thin Films with Optimal Crystalline Volume Fraction for Thin Films Solar Cell Applications

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