Phosphorus Doping of Low Pressure Chemically Vapor‐Deposited Silicon Films

Abstract

unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.218.248.209 Downloaded on 2015-03-15 to IP This Journal, 125, 927 (1978). ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.218.248.209 Downloaded on 2015-03-15 to IP

Studies on the synthesis of cubic ZnS quantum dots, capping and optical–electrical characteristics

“…The existing theoretical models can be, in general, categorized in two basic models [42][43][44][45][46][47], (a) carrier trapping model and (b) dopant segregation model. The former model seems to have made better impact than the latter due to the fact that the latter model could not satisfactorily explain the temperature dependence of conductivity for polycrystalline wide bandgap semiconductor materials.…”

Laser Processing For 3D Junctionless Transistor Fabrication

“…Ex-situ doping (using ion implantation) and in-situ doping have been compared. For insitu doping deposition, a 90 sccm phosphorus flow is used in order to achieve a 10 19 at/cm 3 doping concentration [8]. For exsitu doping, the implantation conditions have been simulated by Kinetic Monte-Carlo TCAD (Silvaco).…”

Thin Film Deposition

“…Doping can also be performed after deposition by ion implantation and diffusion (Chaps. 6,7) [77]. Impurities diffuse considerably faster in polysilicon than in single-crystal silicon.…”