The paper describes the method to grow homogeneous In x Ga 1Àx Sb ternary alloy bulk crystals. The In x Ga 1Àx Sb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In 0.8 Ga 0.2 Sb and In 0.6 Ga 0.4 Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 1C/h, respectively.
The X-ray penetration intensity during the diffusion process of NH 4 Br into H 2 O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4 Br composition using a calibration line. The diffusion coefficient of NH 4 Br into H 2 O was estimated to be 2.2 Â 10 À5 cm 2 /s by comparing the calculated results. The method was applied to the growth of InGaSb from the In-Ga-Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In-Ga-Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution. r
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