In situ observation of composition profiles in the solution by X-ray penetration method

Abstract

The X-ray penetration intensity during the diffusion process of NH 4 Br into H 2 O was measured by a CdTe line sensor as a function of time and it was converted to the NH 4 Br composition using a calibration line. The diffusion coefficient of NH 4 Br into H 2 O was estimated to be 2.2 Â 10 À5 cm 2 /s by comparing the calculated results. The method was applied to the growth of InGaSb from the In-Ga-Sb solution. The indium composition profiles in the solution were measured and growth of InGaSb from the In-Ga-Sb solution was observed from the change of X-ray intensity. The growth region of InGaSb crystal was confirmed by the electron probe microanalysis. It was demonstrated that the X-ray penetration method was a powerful method to measure the composition profiles in the solution. r

Numerical Simulation of the Dissolution Process of GaSb into InSb Melt under Normal and Microgravity Conditions

“…Rajesh et al 7) carried out an in-situ observation of In x Ga 1-x Sb crystal growth in a furnace with temperature gradient along the growth ampoule. In this experiment, a cartridge of GaSb/InSb/GaSb sandwich structure was used, and the dissolution process of GaSb was examined by the X-ray penetration method 6) . When the cartridge is heated over the melting point of InSb, the InSb-melt was established in the middle region because the melting point of InSb is lower than that of GaSb.…”

Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments

“…Several numbers of reports are available in literature for the in-situ observation of growth process of Si [17][18][19][20][21] as well as various binary materials [22][23][24][25][26][27]. However, only very few works were reported on the in-situ observation [9,28] and numerical investigation [29,30] of high temperature growth process of ternary alloy semiconductor materials. When compared to binary materials, the dissolution process and growth kinetics are more complicated for ternary materials.…”

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

“…Due to fundamental as well as increasing technological importance of the III-V alloy semiconductors, it is indispensable to understand the growth kinetics of the material by means of insitu observations. In this point of view, Hayakawa et al [18] observed the diffusion process of NH 4 Br into H 2 O as a function of time by X-ray penetration method using a CdTe detector and the penetrated X-ray intensity was converted to the NH 4 Br composition using a calibration line. Based on the above method, indium composition profiles in the In-Ga-Sb solution were measured using the cylindrical shaped GaSb/InSb/GaSb sandwich sample [18].…”

“…In this point of view, Hayakawa et al [18] observed the diffusion process of NH 4 Br into H 2 O as a function of time by X-ray penetration method using a CdTe detector and the penetrated X-ray intensity was converted to the NH 4 Br composition using a calibration line. Based on the above method, indium composition profiles in the In-Ga-Sb solution were measured using the cylindrical shaped GaSb/InSb/GaSb sandwich sample [18]. In addition, they have investigated the growth rate and the solid-liquid interface shape of the In x Ga 1 À x Sb crystals using the heat pulse technique and numerical simulation [19][20][21][22].…”