Numerical Simulation of the Dissolution Process of GaSb into InSb Melt under Normal and Microgravity Conditions

Takagi, Yasunari; Suzuki, Natsuki; Okano, Yasunori; Hayakawa, Y.; Dost, S.

doi:10.2322/tastj.10.ph_1

Cited by 2 publications

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References 11 publications

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“…This is mainly due to the suppression of convective flow in the solution (melt). Therefore, several experimental and numerical studies were performed for a better understanding of the InGaSb crystal dissolution and growth process by comparing the terrestrial and microgravity conditions [3][4][5][6][7][8][9]. Also recently Inatomi et al have compared the InGaSb crystals grown on the ISS and on Earth, and demonstrated that the shape of the growth interface was a slightly concave towards the seed under microgravity [10].…”

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confidence: 99%

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

et al. 2016

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In x Ga 1-x Sb bulk crystal was grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured system onboard the International Space Station (ISS). In order to investigate the transport phenomena especially in terms of interface shapes and dissolution heights, the dissolution process was simulated under a micro-gravity level of the ISS. Simulation results showed that the seed/melt interface was concave towards the seed due to the temperature distribution of the system. This prediction is in good agreement with the results of our previous experimental study.

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Section: Introductionmentioning

confidence: 99%

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

et al. 2016

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“…Murakami et al (2004) have studied the effect of the gravitational direction on the dissolution and growth processes by varying the inclination angles of the crystals. Rajesh et al (2010Rajesh et al ( , 2011 and Takagi et al (2012) have carried out experimental and numerical studies on the dissolution of GaSb into InSb melt under normal gravity (on ground). Both results show that the gravity induced solutal convection strongly affects the dissolution process.…”

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A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

Mirsandi

Yamamoto

Takagi

et al. 2015

Microgravity Sci. Technol.

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In x Ga 1−x Sb bulk crystals are to be grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured sample onboard the International Space Station (ISS). The InGaSb crystals will be grown on top of GaSb seed single crystals with different orientations viz., (111)A, (111)B, (110), (100) in order to examine and understand the growth kinetics of the crystals. In the present work, a numerical model of the crystal growth system has been developed to investigate the interface kinetics effects on the growth process by taking kinetics coefficient into account. The proposed numerical model was applied to evaluate the effect of crystal orientation on growth rate. Simulation results showed that the kinetics coefficient, whose value depends on crystal orientation, affected the growth rate of InGaSb crystal and the dissolution rate of GaSb feed crystal in the sandwich system. Nomenclaturevector in the vertical direction f interface position (m) g gravity acceleration (m · s −2 ) La latent heat (J · kg −1 ) m slope of the interface n unit vector normal to the interface p pressure (Pa) T temperature (K) u fluid velocity component in the horizontal direction (m · s −1 ) t time (s) v fluid velocity vector (m · s −1 ) v fluid velocity component in the vertical direction (m · s −1 ) x horizontal direction coordinate (m) y vertical direction coordinate (m) y + dimensionless wall distance (-) G acceleration normalised by gravity of Earth (m · s −2 )Greek symbols α thermal diffusivity (m 2 · s −1 ) β kinetics coefficient (m · s −1 ) β(0) kinetics coefficient at the unperturbed interface (m · s −1 ) β st kinetics coefficient of steps (m · s −1 ) β C solutal expansion coefficient (-) Microgravity Sci. Technol. β T thermal expansion coefficient (K −1 ) λ thermal conductivity (W · m −1 · K −1 ) μ viscosity (kg · m −1 · s −1 ) ρ density (kg · m −3 ) ν kinematic viscosity (m 2 · s −1 ) C concentration difference (-)

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Numerical Simulation of the Dissolution Process of GaSb into InSb Melt under Normal and Microgravity Conditions

Cited by 2 publications

References 11 publications

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

A Numerical Study on the Growth Process of InGaSb Crystals Under Microgravity with Interfacial Kinetics

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