Numerical simulation of InGaSb crystals growth under microgravity onboard the international space station

Abstract

In x Ga 1-x Sb bulk crystal was grown using a GaSb(seed)/InSb/GaSb(feed) sandwich-structured system onboard the International Space Station (ISS). In order to investigate the transport phenomena especially in terms of interface shapes and dissolution heights, the dissolution process was simulated under a micro-gravity level of the ISS. Simulation results showed that the seed/melt interface was concave towards the seed due to the temperature distribution of the system. This prediction is in good agreement with the results of our previous experimental study.

Control of growth interface shape during InGaSb growth by vertical gradient freezing under microgravity, and optimization using machine learning

“…1. (Color online) Schematics of the vertical gradient freezing method: (a) growth ampoule, (b) applied temperature profile, and (c) grid system of the simulation 27,28).…”