Growth of homogeneous InGaSb ternary alloy semiconductors on InSb seed

Abstract

The paper describes the method to grow homogeneous In x Ga 1Àx Sb ternary alloy bulk crystals. The In x Ga 1Àx Sb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to grow homogeneous crystal was given by the product of the temperature gradient and the growth rate. The temperature gradient was estimated from the indium composition profile in the grown crystal. The thermal pulses were applied during the holding process to estimate the growth rate. The respective growth rates were 0.45 and 0.19 mm/h for indium compositions of 0.8 and 0.6. The homogeneous In 0.8 Ga 0.2 Sb and In 0.6 Ga 0.4 Sb crystals were grown by decreasing the temperature with an optimized cooling rate of 0.77 and 0.33 1C/h, respectively.

Crystal Growth of Ternary Alloy Semiconductor and Preliminary Study for Microgravity Experiment at the International Space Station

“…In this study, the striation was induced in the grown crystal (Fig. 2) by the heat pulse increasing the growth temperature from 690°C to 700°C, as the Te was concentrated by the change of the growth temperature 4) . From the position and the shape of the striations, crystal growth rate and the shape of the interface can be estimated.…”

“…After the holding period, temperature decreased rapidly to initial value and thus crystal was rapidly grown with high growth rate during cooling cycle of heat pulse. The Te concentration in the rapidly grown region was larger compared with the other area due to change in effective segregation coefficient with growth rate 4) . The results of ICP-MS supported the formation mechanism of striations.…”

Study of In distribution on GaInSb:Al crystals by ion beam techniques

“…The solid-liquid (S-L) interface shape during growth process, the growth rate and the rejection on the third element towards the melt, are the main factors that make difficult the growth of these ingots with a structural and compositional homogeneity [1,[8][9][10][11][12][13][14][15][16]. In this way, the main challenge to overcome when growing these ternary alloys is the indium segregation, that causes a constitutional supercooling (CSR) due to solute accumulation at S-L interface front [3,[17][18][19][20][21][22].…”

In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method

“…Based on the above method, indium composition profiles in the In-Ga-Sb solution were measured using the cylindrical shaped GaSb/InSb/GaSb sandwich sample [18]. In addition, they have investigated the growth rate and the solid-liquid interface shape of the In x Ga 1 À x Sb crystals using the heat pulse technique and numerical simulation [19][20][21][22]. Further investigations are needed to understand the dissolution and growth process, more in detail.…”