Study of In distribution on GaInSb:Al crystals by ion beam techniques

Streicher, Michael A.; Corregidor, V.; Catarino, N.; Franco, N.; Fonseca, M.; Martins, Luís F. G.; Alves, E.; Costa, Eleani Maria da; Dedavid, Berenice Anina

doi:10.1016/j.nimb.2015.09.032

Cited by 10 publications

(4 citation statements)

References 34 publications

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“…Stelian and Duffar [20] simulated the effects of temperature gradient and growth rate on GaInSb crystal quality, reported that the radial and axial segregation of In were 0.626 mol% mm −1 and 0.674 mol% mm −1 , respectively. Streicher et al [21] prepared GaInSb crystals doped with a small amount of Al with VB technique. It is found that the composition uniformity of the doped ingot was higher than that of the undoped ingot.…”

Section: Introductionmentioning

confidence: 99%

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Wang¹,

Wang²,

He³

et al. 2023

Semicond. Sci. Technol.

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Ga1-xInxSb(0<x<1) crystal is a very promising substrate material, which can be used to fabricate a variety of high-performance infrared detectors and lasers by epitaxial growth. Herein, we prepared high quality Ga0.86In0.14Sb crystal (25 mm diameter, 100 mm length) with travelling heater method (THM) applied rotating magnetic field (RMF), and revealed the effects of RMF intensity on structure and electrical and optical properties of the crystal. As the RMF intensity increased the crystal quality significantly improved, and the radial segregation of indium decreased from 0.258 to 0.031 mol%/mm, in the center of the crystal. Similarly, the segregation of indium along the ingot between 20 to 80 mm, towards the traveling zone, decreased from 0.114 to 0.038 mol%/mm. The dislocation density of GaInSb crystal ingot also decreased from 5.361×105 cm-2 to 5.295×103 cm-2. The electric properties of the crystal also improved, the carrier mobility increased to 1.902×103 from 1.358×103 cm2/(V•s), the resistivity decreased to 1.047×10-3 from 1.822×10-3 Ω•cm. Moreover, the infrared transmittance increased from 36 to 39%.

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Section: Introductionmentioning

confidence: 99%

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Wang¹,

Wang²,

He³

et al. 2023

Semicond. Sci. Technol.

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“…Klein et al [25] prepared Tedoped Ga 1-x In x Sb crystal with the VB method, and found that Te optimized and compensated for the intrinsic acceptor defects in the crystal, making the axial distribution of In component more uniform, reducing dislocation density, and making the structure more uniform. Streicher et al [26] prepared Ga 0.8 In 0.2 Sb crystals containing Al with the VB method, the axial segregation was 2.3 mol% mm −1 . However, the impacts of Al doping on segregation, dislocation, and electrical properties were not analyzed in detail.…”

Section: Introductionmentioning

confidence: 99%

Improving the quality and properties of GaInSb crystal with Al doping

Wang,

Liu,

Liu

et al. 2024

Phys. Scr.

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GaInSb crystal is a promising substrate material that can be used to prepare various high-performance devices. Ga0.86In0.14Sb and Al-doped Ga0.86In0.14Sb (Ga0.86In0.14Sb:Al) crystals were grown with the vertical Bridgman method (VB). The doping concentration of aluminum (Al) is 0.005 - 0.015 molar ratio. The effect of Al doping on the structure and properties of Ga0.86In0.14Sb crystal was studied. The results indicated that Al doping significantly reduced the segregation of indium (In) component in the crystal, with the radial segregation reaching a minimum of 0.051 mol%/mm and the axial segregation reaching a minimum of 0.067 mol%/mm. The doping of Al also improved the crystal quality (lattice structure integrity) of Ga0.86In0.14Sb. The passivation and compensation of Al on the intrinsic defects of Ga0.86In0.14 Sb crystal significantly inhibited the generation of dislocation, of which density decreased to 2.461 × 103 cm-2. The doping of Al as the equivalent electron element of gallium (Ga) and In not only made the carrier concentration increase to 1.848 × 1018 cm-3 but also made the carrier mobility increase to 1.982 × 103 cm2/(V·s), resulting in the resistivity decreasing to 1.261 × 10−3 Ω·cm.

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“…The calculation of the yield using equation 4would be more convenient and the sample analysis could be automated if there existed an appropriate analytical code. Several attempts have been presented in the past, with ERYA [1][2][3][4][5][6] being the most prominent candidate. Unfortunately, this code operates only in Windows 64-bit version-based computers, because it is developed in LabVIEW (National Instruments TM ), and moreover, it is not compatible with R33 differential cross section standard input files.…”

Section: Introductionmentioning

confidence: 99%

Development of a simulation code for material analysis using the PIGE technique

Preketes–Sigalas

Lagoyannis

Axiotis

2019

hnps

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Particle Induced Gamma ray Emission (PIGE) is a well known and widely used Ion Beam Analysis (IBA) technique for non-destructive material analysis, usually in conjunction with Proton Induced X-ray Emission (PIXE). The main drawback in the applicability of PIGE regarding the quantification of light elements in various heavy element substrates is the need for many reference targets with similar matrices to the one under study, because of the importance of the ion energy loss in the calculations. In order to overcome this problem, an appropriate simulation code that uses as inputs the experimental spectrum and the relevant differential cross sections, with the output being the quantification of the concentration depth profiles of the isotopes of interest is needed. A code like this is currently being developed in C++ and it is compatible with Windows, Linux and Mac.

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Study of In distribution on GaInSb:Al crystals by ion beam techniques

Cited by 10 publications

References 34 publications

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Effect of rotating magnetic field intensity on structure and electrical and optical properties of GaInSb crystal grown with travelling heater method

Improving the quality and properties of GaInSb crystal with Al doping

Development of a simulation code for material analysis using the PIGE technique

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