A metalorganic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], was used as a less-hazardous selenization source for the preparation of CuInGaSe 2 alloy films for solar cell application. Purely single-phase, polycrystalline films of CuInGaSe 2 were formed without additional annealing process. Photoluminescence spectra of the films at low temperature were dominated by three donor-acceptor pair emissions peculiar to the films used for a photo-absorbing layer of state-of-the-art CuInGaSe 2 -based solar cells.
The use of a less-hazardous organometallic Se source, diethylselenide [(C 2 H 5 ) 2 Se: DESe], enabled to grow single-phase CuInGaSe 2 solid solutions for high-efficiency solar cell application by the selenization of metal precursors without additional thermal annealing. Distinct from the case using Se vapor or H 2 Se gas, uniform CuInGaSe 2 films were obtained from Cu-In-Ga metal precursors premixed with Se. In contrast, the films formed from Se-free precursors separated into two phases with different compositions. Photoluminescence spectra of approximately 2.0-µm-thick films at 77 K were dominated by the defectrelated donor-acceptor pair and free electron-to-acceptor recombination emissions particular to the CuInGaSe 2 films that are used for high conversion efficiency solar cells.
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