Formation of Zn-doped CuInSe2 films by thermal annealing using dimethylzinc

Fabrication of Zn‐doped Cu(In,Ga)Se2 thin film solar cells prepared by Zn diffusion from the gas phase using dimethylzinc

“…The values of the diffusion depth estimated from both depth profiles using glow discharge optical emission spectroscopy and capacitance-voltage measurements are approximately the same as the estimated values [9]. Details of the experimental results have been provided in our previous report [16]. The Zn diffusion depth was controlled by varying the DMZn gas flow time to form an electrical pn-interface in the CIS films.…”

“…Although the present CIS and CIGS films are of insufficient quality for use in the absorption layer, a simplest solar cell structure was fabricated to elucidate the effect of the Zn-diffusion layer using DMZn for the CIGS solar cell. The surface region of Zn-diffused CIS films typically exhibited n-type conductivity in the hot-point probe analysis and the I-V characteristics of a Zn-diffused CIS/Mo/SLG structure revealed rectifying properties [16]. These results implied the formation of a CIS pnhomojunction.…”

“…The DMZn gas flow time was varied between 3 and 300 s to obtain a Zn-diffused layer. According to experimental reports of the thermal diffusion depth of Zn in CIGS films [9,16], the diffusion depths of Zn are estimated as 150 and 550 nm for DMZn flow times of 3 and 300 s, respectively.…”

“…These results implied the formation of a CIS pnhomojunction. A representative 1/C 3 -V curve of a Zndiffused CIS/Mo/SLG structure might imply that the formation of the junction is attributable to the thermal diffusion of Zn into the CIS film [16].…”

Crystalline Zinc Indium Selenide Thin Film Electrosynthesis and its Photoelectrochemical Studies

“…Xianzhong Sun et al have grown ZnIn 2 Se 4 buffer layer by thermal diffusion on CuInSe 2 thin film deposited by electrodeposition [9]. ZnIn 2 Se 4 material has also been prepared by co-evaporation [10][11][12], chemical vapor deposition [13], spray pyrolysis [14,15], and vertical Bridgman technique [16]. However, no attempt has been made for deposition of ZnIn 2 Se 4 thin films by electrodeposition method.…”