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Band-edge related photoluminescence from a strained Si0.96Sn0.04 alloy grown by molecular beam epitaxy on Si(100) substrate has been seen for the first time. We report band-edge related photoluminescence from a compressively strained pseudomorphic Si0.96Sn0.04 alloy. The luminescence observed consisted of two dominant features, a well-resolved band-edge luminescence consisting of a no-phonon and a transverse optical phonon replica, and a deep-level broad luminescence peak around 770 meV. The band-edge feature is attributed to a no-phonon free excitonic recombination in the binary alloy and exhibits a near linear power dependence. We also observe a red shift of the energy gap of Si0.96Sn0.04 alloy with respect to Si, which corresponds to the bulk alloy effect.

A metal-semiconductor-metal (MSM) In0.53Ga0.47As photodiode using a transparent cadmium tin oxide (CTO) layer for the interdigitated electrodes was investigated. The transparent contact prevents shadowing of the active layer by the electrodes, thus allowing greater collection of incident light. The barrier height (φBn) of CTO on i-In0.52Al0.48As was determined to be 0.47 eV, while the Ti/Au barrier height was 0.595 eV. The reduced barrier height for CTO is caused by tunneling through the sputter-damaged cap layer. Responsivity for 1.3 μm incident light was 0.49 and 0.28 A/W, respectively, for the CTO and Ti/Au MSM photodiodes. No antireflection (AR) coating was utilized over the bare semiconductor surface. The CTO MSM photodiode shows a factor of almost two improvement in responsivity over conventional Ti/Au MSM photodiodes.

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