Current transport characteristics of SiGeC/Si heterojunction diode

Chen, F.; Orner, B. A.; Guerin, D.; Khan, A.; Berger, Paul R.; Shah, S. Ismat; Kolodzey, J.

doi:10.1109/55.545780

Cited by 11 publications

(4 citation statements)

References 8 publications

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“…As refer to Table 2, Io increases with increasing temperature while n decreases. Similar results for p-n junctions have been reported for several studies [8,[20][21][22][23]. The values of n are quite large according to an ideal p-n junction.…”

Section: Resultssupporting

confidence: 88%

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

Aldemir

Kaleli

2018

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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n-AgInSe2/p-Si heterojunction diode was fabricated by a successive layer deposition of AgInSe2 thin film on p-type Si. The ideality factor and saturation current of the diode have exhibited temperature dependent behaviour. The activation energy was calculated by using traditional activation energy plot. The current mechanisms for diode were determined as defectassisted tunnelling and carrier recombination. Furthermore, a modified Horvath method which was firstly presented for n-AgInSe2/p-Si heterojunction here was used for calculation of activation energy.

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Section: Resultssupporting

confidence: 88%

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

Aldemir

Kaleli

2018

Süleyman Demirel Üniversitesi Fen Edebiyat Fakültesi Fen Dergisi

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“…6 Experimentally, most HJs have the following general formulations for the current density 17 J = J 00 exp(-∆E/kT)[exp(qV/ηkT) -1] where J 00 is the saturation reverse current, η is the ideality factor, and ∆E is a measured activation en- Note: Mean surface roughness measured by AFM. 18 Due to large valence band offsets, 15 we conclude that the electrons inject from the wider gap n-Si to the p + -GeC or SiGeC layer. Activation energy for the zero bias extrapolation of the lnJ vs V curves was obtained from an Arrhenius plot for different temperature.…”

Section: Influence Of Carbon On I-v Characteristics Of Sigec/si and Gmentioning

confidence: 94%

Electrical properties of Si1−x−yGexCy and Ge1−yCy alloys

Chen

Tröger

Roe

et al. 1997

Journal of Elec Materi

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The effects of carbon on the structural and electrical properties of Si 1-x-y Ge x C y and Ge 1-y C y alloys grown by the molecular beam epitaxy have been examined by Hall effect measurements, current-voltage measurements, x-ray diffraction, and atomic force microscopy. Hall effect measurements showed that the addition of carbon increased the hole mobility in GeC compared to pure Ge, we attributed this increase to improved crystalline quality and reduced surface roughness. Current-voltage characteristics of SiGeC/Si and GeC/Si heterojunction diodes showed that with increasing carbon, the reverse leakage current decreased and the forward turn-on voltage increased, attributed to the increase in bandgap energy and reduction of intrinsic carrier concentration n i .

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“…Mesa diodes with a junction area of 0.2 mm and a light sensitive area (not shaded by the contacts) of 0.182 mm were fabricated using photolithography and wet chemical etching [8]. Electrical contacts of Ti-Au metal were thermally evaporated to a thickness of 60 nm/300 nm, respectively, as shown in the inset to Fig.…”

Section: A Device Fabricationmentioning

confidence: 99%

The effects of composition and doping on the response of GeC-Si photodiodes

Kolodzey

Gauthier-Lafaye²,

Sauvage³

et al. 1998

IEEE J. Select. Topics Quantum Electron.

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The spectral responses of a series of heterojunction diodes of p-type Ge10yCy on n-type Si (100) substrates were measured by Fourier transform infrared (IR) spectroscopy. Alloy layers 0.5 m thick were grown by molecular beam epitaxy at a substrate temperature of 400 C and were doped p-type with different B concentrations. With increasing C content, the diode dark current decreased, and the optical absorption band edge shifted toward higher energy by 70 meV for 0.12 atomic persent of C. The increase in energy was attributed to the composition dependence of the bandgap rather than to strain relaxation, because the GeC layers were nearly relaxed with the same strain. The photoresponsivity was 0.07 A/W at a wavelength of 1.55 m, and 0.2 A/W at a wavelength of 1.3 m. These measurements show that GeC photodetectors have good properties and reasonable response at technologically important near-IR wavelengths and can be fabricated by heteroepitaxy for compatibility with Si integrated circuits.

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Current transport characteristics of SiGeC/Si heterojunction diode

Cited by 11 publications

References 8 publications

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

n-AgInSe2/p-Si Heteroeklem Diyodunun Sıcaklığa Bağlı Akım-Gerilim Karakteristikleri

Electrical properties of Si1−x−yGexCy and Ge1−yCy alloys

The effects of composition and doping on the response of GeC-Si photodiodes

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