Optical properties of Ge1-yCy alloys

Orner, B. A.; Khan, A.; Hits, D.; Chen, F.; Roe, K.; Pickett, J. H.; Shao, Xinqing; Wilson, R. G.; Kolodzey, J.; Berger, Paul R.

doi:10.1007/bf02666259

Cited by 27 publications

(8 citation statements)

References 11 publications

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“…Therefore, much effort has been devoted to increase the C composition in these alloys up to the levels far above the equilibrium value. [1][2][3][4] In metastable Ge 1−x C x systems, in particular, such efforts have been actively made using the molecular beam epitaxial (MBE) method. 3,4) A pyrolytic graphite filament has been used as a C molecular source in those works.…”

Section: Introductionmentioning

confidence: 99%

“…[1][2][3][4] In metastable Ge 1−x C x systems, in particular, such efforts have been actively made using the molecular beam epitaxial (MBE) method. 3,4) A pyrolytic graphite filament has been used as a C molecular source in those works. To date, however, the maximum value achieved for C composition x in the Ge 1−x C x system has been limited to x 0.03.…”

Section: Introductionmentioning

confidence: 99%

“…To date, however, the maximum value achieved for C composition x in the Ge 1−x C x system has been limited to x 0.03. 3,4) We have developed a novel thin-film crystal growth technology using a low-energy ion beam deposition method combined with MBE, which is termed the combined ion beam and molecular beam epitaxial (CIBMBE) method. [5][6][7] The use of low-energy ion beams is expected to be effective in increas-ing the solid solubility of incorporated elements, which makes it possible to realize nonequilibrium alloys.…”

Section: Introductionmentioning

confidence: 99%

“…X-ray diffraction spectra obtained by the 2θ scan method in samples prepared at E i = 100 eV (sample nos [2][3][4][5]…”

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confidence: 99%

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Features of emission from a submillimeter laser under intense optical pumping

et al. 2002

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A combined ion beam and molecular beam epitaxial method was applied for the formation of a Ge 1−x C x alloy on Si(100) using a low-energy (50-100 eV) C + ion beam and a Ge molecular beam. Ge 1−x C x alloys were formed up to x = 0.047. It was revealed that the sticking coefficients of C + ions into Ge were ∼53% and ∼34% at the ion energies of 100 eV and 50 eV, respectively. This result suggests that the ratio of the number of ions recoiling at the surface of the substrate to the number of incident ions is higher for lower energy ions within the ion energy range examined. Characterization of crystal structure by X-ray diffraction suggests that the deposited films are single crystals grown epitaxially on the substrate with twins on {111} planes. Study of the C-1s chemical shift by X-ray photoelectron spectrometry in the sample of x = 0.047 revealed that the total composition of C atoms incorporated in substitutional and interstitial lattice sites is about 72%, while that of C atoms incorporated in the form of precipitate is about 28%. Lattice dynamical characterization by Raman spectroscopy suggests that the deposited layers have been damaged by ion irradiation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…X-ray diffraction spectra obtained by the 2θ scan method in samples prepared at E i = 100 eV (sample nos [2][3][4][5]…”

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confidence: 99%

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Features of emission from a submillimeter laser under intense optical pumping

et al. 2002

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“…Epitaxial Ge 1Àx C x layers on Si(100) substrates are one of the most promising photonic materials for Si-based lightemitting devices with a wavelength of around 1.5 mm, because the Ge 1Àx C x crystal is to have a direct-transitiontype band structure for a C content x of 4 to 11% 1) and Ge 1Àx C x of x ¼ 10% is due to a good lattice-match with Si(100) substrate. 2) Although various studies on Ge 1Àx C x epitaxy have been made, Ge 1Àx C x layers with x ¼ 4% or more have not yet been realized.…”

Section: Introductionmentioning

confidence: 99%

The Urysohn identity and dimension of manifolds

Fedorchuk¹

1998

Russ. Math. Surv.

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A unique fabrication technique of Ge 1Àx C x nanocrystal (NC) assemblies with high-density (>10 11 dots/cm 2 ) and small diameter (<10 nm) on a Si(100) substrate has been investigated. In this method, a bio-nanoprocess with proteins ''ferritin'' and solid-source molecular beam epitaxy (MBE) with an arc-plasma gun were adopted. For the MBE growth of Ge 1Àx C x NCs, a Si thin film ''nanomask'' was developed. The MBE-grown Ge 1Àx C x NCs were obtained up to the substitutional C content x ¼ 3:2%. From analyses of field emission scanning electron microscope, transmission electron microscope, the Ge 1Àx C x (x ¼ 1:5%) NC assemblies of very small diameter 7:3 AE 3 nm and high-density more than 1 Â 10 11 dots/cm 2 were revealed. In the photoluminescence (PL) spectra measured at 7 K, a PL peak of around 1.3 mm was obtained due to the quantum confinement effect.

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