The experimental data presented here show that the generation of dislocations in Si along Si3N4 edges is due to the cumulative effect of the Si3N4 stress field near the nitride edge and to the point defects produced during thermal oxidation. Within our experimental range, the stress along the Si3N4 edges alone is not sufficient to generate dislocations in silicon. We have determined a critical ratio of Si3N4 thickness to SiO2 thickness which does not lead to the generation of dislocations.

Silicon oxynitride films false(SilOmNpfalse) have been deposited from SiH4‐CO2‐NH3‐H2 chemical system in a vertical, cold‐wall, multiple wafer, barrel‐type reactor. The kinetics of SiH4‐CO2 and SiH4‐NH3 reactions, both in H2 , have also been studied in the same reactor. All three reactions are first order with respect to SiH4 under conditions of “isolation technique.” Within the selected experimental range, the SiO2 deposition rate is independent of CO2 concentration, the Si3N4 deposition rate is independent of NH3 concentration, and the SilOmNp deposition rate is nearly independent of both CO2 and NH3 concentrations. The deposition rate of SiO2 , Si3N4 , and SilOmNp are not dependent on the H2 flow rate in the experimental range of 60–130 liters/min; thus all three reactions are chemical‐surface rate limited within the experimental range. The activation energies are 23.5, 24, and 29 kcal/g‐mole for SilOmNp , SiO2 , and Si3N4 , respectively. An anomalous effect of deposition temperature on silicon oxynitride refractive index (composition) was discovered and has been explained by the use of adsorption theory.

Die Kinetik der chemischen Dampfphasenabscheidung von SiOz‐Filmen auf Si aus dem System SiH4/CO2/H2 wird zwischen 800 und 1050°C in einem Vielplättchen‐Trommelreaktor untersucht.

This paper presents the results of chemical vapor deposited (CVD) silicon dioxide films on silicon from an SiH4+CO2+H2 system. The kinetics of this reaction have been studied with a barrel reactor. The activation energy (ΔE) of the SiH4 , CO2 reaction in hydrogen is 106.7 J/g mol (25.4 kcal/g mol) in the temperature range 800°–1050°C. The SiH4 and CO2 reaction in hydrogen is shown to be a first‐order reaction with respect to SiH4false(CO2:SiH4≥20false) . The deposition rates of SiO2 are dependent only on deposition temperature and on SiH4 mole fraction. They are independent of the CO2:SiH4 ratio in the experimental range of 7:1–120:1. Electrical characterization was carried out on MOS capacitors of ∼1300Å dielectric thickness. The breakdown field was found to be false(7.8±0.1×106V/normalcmfalse) . Measurements of oxide charges, of mobile charges, and of fast surface‐state density show that these oxides are stable under positive and negative bias, with maximum shifts of 250 mV after 50 hr stress at 200°C and ±2×106V/normalcm electrical field. Postdeposition high‐temperature anneal deteriorates the VFB stability under negative‐bias temperature stress. The index of refraction depends on the CO2:SiH4 ratio, going above 1.46 at a ratio <10. Ratios of CO2:SiH4≥50 give reproducible results at an average index of 1.454±0.001 . Etch rates in “P‐etch” for 1000°C deposited samples are ∼50% faster than thermal oxides grown at the same temperature.

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