Determination of distributed fixed charge in CVD-oxide and its virtual elimination by use of HCl

New ways to measure the work function difference in MOS structures

“…In such cases it is particularly important to know the exact value of the CPD between the semiconductor substrate and the gate material. In spite of that, ~MS values given in the literature [5][6][7][8][9][10] differ considerably. This fact is illustrated in figure 3, for the Al-SiO2-Si systein, to which the experimental part of this work is limited.…”

“…Following CPso calculation, the value of ~MS can be calculated using equation (9) and the value of Qeff can be calculated from equations (14)(15)(16) and (20). 4.…”

“…where ~m and lpSi are potential barrier heights at the gate material-insulator, and semiconductor insulator interfaces, as shown in figure 1, in which other potentials used in this work are also indicated. Both lpm and ~Si are considered here to be positive values, in accordance with the sign convention commonly used in the literature of the subject [1][2][3][4][5][6][7][8][9][10] (1).…”

“…Haberle and Frôschle [8] found the CPD to depend on the silicon substrate orientation in such a way, that oms becomes more positive in case of ~ 100 ~ orientation, than in the case of ~ 111 ~ orientation of the silicon substrate. Gaind and Kasprzak [9] explain the differences in ~MS values reported in the literature, by the différences in MOS structure processing conditions, on the basis of atomic hydrogen chemisorption at the Si-Si02 interface. The dependence of ~MS on MOS system processing conditions was supported by our results reported in [14] and [15].…”

“…The extrapolation of this line to xi = 0, gives : allowing ~MS determination for the measured series of MOS capacitors. The advantages and limitations of this measurement technique are discussed in detail in [3,4] and [6][7][8][9][10]. In our opinion, the main limitations of this method are :…”