Preparation and Properties of SiO2 Films from SiH4 ‐  CO 2 ‐  H 2

Gaind, A. K.; Ackermann, Gerhard; Lucarini, V. J.; Bratter, R. L.

doi:10.1149/1.2132741

Cited by 15 publications

(10 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similarly the deposition rates of SiO2 and Si3N4 are independent of CO2 and NH3 concentrations when the CO2:SiH~ and NHs:SiH4 ratios are kept larger than 7:1 and 5: 1, respectively (12,17). These results were verified during the course of this investigation.…”

Section: Resultssupporting

confidence: 73%

“…To improve the process control, we sought an oxidant such that the rates of oxidation and nitriding reaction (or activation energies) would be nearly equal. Reported activation energies of the SiH~-CO2 reaction (12) and the SiH~-NH3 reaction (6) are within 2 kcal/g mole of each other. Thus, silicon oxynitride of 1.73 refractive index was deposited with an I'~H3/CO2 ratio of ,~ 6 at 900~C, using the SiH~-CO2-NH3-H2 system.…”

mentioning

confidence: 75%

“…Equipment.~The equipment used for this investigation was a vertical, cold-wall, barrel-type, inductionheated, multiple wafer reactor which has been previously described (12,13). Figure 1 is a schematic crosssectional view of the reactor.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Gaind

Ackermann

Lucarini

et al. 1977

J. Electrochem. Soc.

View full text Add to dashboard Cite

Silicon oxynitride films false(SilOmNpfalse) have been deposited from SiH4‐CO2‐NH3‐H2 chemical system in a vertical, cold‐wall, multiple wafer, barrel‐type reactor. The kinetics of SiH4‐CO2 and SiH4‐NH3 reactions, both in H2 , have also been studied in the same reactor. All three reactions are first order with respect to SiH4 under conditions of “isolation technique.” Within the selected experimental range, the SiO2 deposition rate is independent of CO2 concentration, the Si3N4 deposition rate is independent of NH3 concentration, and the SilOmNp deposition rate is nearly independent of both CO2 and NH3 concentrations. The deposition rate of SiO2 , Si3N4 , and SilOmNp are not dependent on the H2 flow rate in the experimental range of 60–130 liters/min; thus all three reactions are chemical‐surface rate limited within the experimental range. The activation energies are 23.5, 24, and 29 kcal/g‐mole for SilOmNp , SiO2 , and Si3N4 , respectively. An anomalous effect of deposition temperature on silicon oxynitride refractive index (composition) was discovered and has been explained by the use of adsorption theory.

show abstract

Section: Resultssupporting

confidence: 73%

mentioning

confidence: 75%

See 1 more Smart Citation

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Gaind

Ackermann

Lucarini

et al. 1977

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…Carbon dioxide reaction.--The reaction of silane with carbon dioxide and hydrogen at 900~176 is frequently usecl to deposit undoped silicon dioxide (19,20). The expected reactions when phosphine is added are CO2 -I-H2"-> CO -t-HH20…”

Section: Phosphorus-doped Silicon Dioxidementioning

confidence: 99%

The High Temperature Deposition and Evaluation of Phosphorus‐ or Boron‐Doped Silicon Dioxide Films

Adams¹,

Capio²,

Haszko³

et al. 1979

J. Electrochem. Soc.

View full text Add to dashboard Cite

Three different reactions for depositing phosphorus-or boron-doped silicon dioxide at high temperatures have been investigated: the reaction of silane and phosphine or diborane with nitrous oxide at 700~176with nitric oxide at 700~176and with carbon dioxide and hydrogen at 900~ The reactions with nitrous oxide are suitable for routine depositions on silicon-integrated circuits. The reactions with nitric oxide are very sensitive to oxygen impurities which cause the film composition to vary. The reactions with carbon dioxide and hydrogen produce very little dopant in the film. The deposition rate and the film composition for the nitrous oxide reaction are satisfactorily explained by the Langmuir-Hinshelwood model for heterogeneous reactions. The films from the nitrous oxide reactions have been evaluated by measuring the refractive index, etch rate, defect density, infrared spectra, step coverage, and diffusion properties. The major differences between these films and films deposited at lower temperatures are the lower etch rate, decreased defect density, and improved step coverage for the films deposited at high temperatures.Silicon dioxide films containing a small amount of phosphorus or boron are frequently used in siliconintegrated circuits. Phosphorus-doped silicon dioxide is reported to passivate circuits (1, 2), getter impurities (3), and improve the electrical performance of MOS devices (4). The phosphorus-doped silicon dioxide is usually deposited by reacting silane, phosphine, and oxygen at 300~176(5-7), or by decomposing tetraethoxysilane and triethylphosphate at 700 ~ 800~ (8). Contamination caused by particles of sil~on dioxide falling from loose deposits on the reactor walls is a problem for both processes. In addition, the low temperature silane and oxygen process suffers from poor step coverage. This can be remedied by flowing the glass at high temperature after deposition, but flowing requires a relatively high phosphorus concentration (,~6-10 w/o P), otherwise the temperature for flowing is too high for silicon devices. Boron-doped silicon dioxide, frequently used as a diffusion source, is usually deposited by reacting silane, oxygen, and diborane at 300~176 (9, 10). This process also suffers from particle contamination and poor step coverage. We have investigated other chemical reactions for depositing phosphorus-and boron-doped silicon dioxide. Two of these reactions (silane and phosphine or diborane reacting with nitrous oxide) have been used routinely for several months to deposit films for CMOS integrated circuits. The results of our experiments are reported in this paper.* Electrochemical Society Active Member.

show abstract

“…SiO 2 and Si 3 N 4 form a series of noncrystalline silicon oxynitrides. SiON may prove valuable to the area of integrated optics because of the possibility it offers of producing a material where the refractive index can be tailored over a very wide range [13][14][15][16][17][18][19]. The main material consideration for SiON in waveguide application is the requirement of low loss, hence the deposition parameters of the material may be different from the material used in integrated circuit technology.…”

Section: Introductionmentioning

confidence: 99%

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

Sahu

Agnihotri

Jain

et al. 2000

Semicond. Sci. Technol.

View full text Add to dashboard Cite

We have examined the influence of bonded hydrogen on the losses in silicon oxynitride (SiON) planar optical waveguides on silicon substrates having a silicon dioxide buffer layer. In the SiON layer grown by plasma enhanced chemical vapour deposition, hydrogen was mainly bonded to silicon as evidenced by strong absorption at 2160 cm −1 . The concentration of bonded hydrogen was reduced from 1.2 × 10 22 cm −3 to 5 × 10 21 cm −3 as the substrate temperature was raised from 100 to 300 • C. The corresponding change in the loss was from 1.5 to 1.2 dB cm −1 at 632.8 nm.

show abstract

Preparation and Properties of SiO2 Films from SiH4 ‐ CO 2 ‐ H 2

Cited by 15 publications

References 7 publications

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

Oxynitride Deposition Kinetics in a SiH4 ‐ CO 2 ‐ NH 3 ‐ H 2 System

The High Temperature Deposition and Evaluation of Phosphorus‐ or Boron‐Doped Silicon Dioxide Films

Influence of hydrogen on losses in silicon oxynitride planar optical waveguides

Contact Info

Product

Resources

About