We report the first use of chemically assisted ion beam etching to form laser mirrors on GaAlAs graded index separate confinement single quantum well heterostructures grown by metalorganic chemical vapor deposition. Over 80 mW cw optical power is obtained from the etched facet of uncoated 300-μm-long, etched/cleaved 60 μm stripe devices mounted p side up, and catastrophic failure occurs at a cw power as high as 205 mW. Differential quantum efficiencies for light emitted from the etched facet are 32% pulsed (27% cw) and the threshold current is 145 mA pulsed (150 mA cw).
There has been considerable interest in the development of high performance lasers that can be integrated with other opto-electronic components on the same chip. Generally, this involves fabricating one of the laser mirrors by a technique other than by cleaving. Techniques that have been explored are reactive ion etching(1), hybrid wet and reactive ion etching and focused ion beam machining.
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