High-power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

Tihanyi, P.; Wagner, David K.; Roza, A. J.; Vollmer, Hubert; Harding, C. M.; Davis, Robert J.; Wolf, E. D.

doi:10.1063/1.97753

Cited by 20 publications

(2 citation statements)

References 10 publications

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“…Examples include etched facet lasers, 1 angled mirror, 2,3 and vertical cavity 4 surface emitting laser arrays, waveguides, waveguide mirrors 5 and monolithic spectrometers for wavelength division multiplexing. In this technique, a substrate with a patterned masking material is placed in a vacuum chamber and subjected to a broad area collimated beam of inert gas ions, and a flow of reactive gas.…”

Section: Introductionmentioning

confidence: 99%

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

Hryniewicz¹,

Chen²,

Hsu³

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inInvestigation of electrochemical etch differences in AlGaAs heterostructures using Cl2 ion beam assisted etching J. Vac. Sci. Technol. A 33, 021304 (2015); 10.1116/1.4904211High-aspect-ratio chemically assisted ion-beam etching for photonic crystals using a high beam voltage-current ratio J.Dry etching and consequent burring regrowth of nanosize quantum wells stripes using an in situ ultrahigh vacuum multichamber system A chemically assisted ion beam etching system has been developed which performs high quality, highly anisotropic etching of AlGaAs/GaAs at relatively low ion energies ͑200 eV͒. The use of three grid ion optics in a Kaufman ion source allows etching at low energies with reasonable rates without loss of profile verticality. All ultrahigh vacuum etching chamber construction with a high throughput turbomolecular pump and high vacuum loadlock provide routine high quality etching of AlGaAs without the use of etch chamber cryo panels or cryo pumps. Low ion energy and a clean vacuum environment permit the use of a single level, non hard baked photoresist mask. Benefits include high pattern resolution and fidelity, low mask erosion rate, good dimensional control, and easy, complete mask stripping as well as reduced substrate damage.

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Section: Introductionmentioning

confidence: 99%

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

Hryniewicz¹,

Chen²,

Hsu³

et al. 1997

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…The facets and deflectors are formed by selective chemical etching followed by a mass-transport process [31,40,41). Because a similar mass-tiansport process is not available for AlGaAs, other techniques such as ion-bearn-assisted etching (IBAE) [22,42--45], modified IBAE [46,47], reactive ion etching [22,24,48], and ion milling [24,35,36] have been used to form the noncleaved laser facets and adjacent deflecting mirrors. Although these monolithic techniques hold great promise for the high-volume production of large-area high-power laser arrays, they are still in the early stages ofdevelopment.…”

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confidence: 99%

Two-Dimensional Surface-Emitting Arrays Of GaAs/AlGaAs Diode Lasers

et al. 1989

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• Hybrid and monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers have been designed and fabricated. The hybrid devices consist oflinear arrays ofedge-emitting graded-index: separateconfinement-heterostructure singIe-quantum-well (GRIN-SCH-SQW) lasers mounted on a Si substrate containing integral 45°deflecting mirrors and microchanneIs for the flow ofcooling fluid. With this design, CW output powers~120 W/cm 2 have been achieved. For quasi-CW operation (150-j.lSec . 2 pulses), peak output powers greater than 400 W/cm appear to be achievable.Two types of monolithic arrays-the first of edge-emitting lasers with ex:ternalcavity deflecting mirrors adjacent to the laser facets and the second with intracavity 45°deflecting mirrors-have also been fabricated and tested.A RRAYS OF SEMICONDUCTOR diode lasers are of .great interest for applications that require power levels higher than single devices can attain. Development efforts to date have concentrated mainly on linear arrays of edge-emitting GaAs/AlGaAs lasers [1-6]; these efforts have met with considerable success. Higher pulsed output power can be achieved by stacking and bonding these arrays to form composite twodimensional arrays that are often referred to as rack-andstack arrays [7][8][9][10][11]. Unless the stacking density is low; however, thermal considerations generally limit the maximum pulse repetition rate to less than 100 Hz.An alternative to such composite arrays are monolithic two-dimensional arrays that consist of surfaceemitting lasers. Several types of surface-emitting GaAs/AlGaAs and GaInAsPlInP diode lasers have . been demonstrated, including lasers with resonant cavities that are normal to the surface (i.e., vertical-cavity lasers) [12][13][14][15][16][17], lasers that incorporate total-iriternalreflecting 45°mirrors in the laser cavity [18-25J, and lasers that utilize a second-order grating to achieve emission normal to the surface [26][27][28][29]. During the past several years, researchers have made substantial progress in developing all of the above monolithic surface-emitting techniques. In particular, although they still suffer from high series resistance and low power efficiency, vertical-cavity lasers that utilize epitaxially grown high-reflectivity quarter-wave stacks [30] to define the laser cavity have become an exciting area ofresearch. Another approach to fabricating monolithic two-dimensional arrays is to couple edge-emitting diode lasers with external mirrors that deflect the radiation from the laser facets by 90° [21,23,[31][32][33][34][35][36][37][38][39]. At Lincoln Laboratory, Z.L. have fabricated such arrays of devices that combine a GaInAsP/InP laser with a parabolic deflector adjacent to one or both facets. The facets and deflectors are formed by selective chemical etching followed by a mass-transport process [31,40,41). Because a similar mass-tiansport process is not available for AlGaAs, other techniques such as ion-bearn-assisted etching (IBAE) [22,42--45], modified IBAE [46,47], reactive ion et...

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Diode laser degradation mechanisms: A review

Waters¹

1991

Progress in Quantum Electronics

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High-power AlGaAs/GaAs single quantum well lasers with chemically assisted ion beam etched mirrors

Cited by 20 publications

References 10 publications

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

Ultrahigh vacuum chemically assisted ion beam etching system with a three grid ion source

Two-Dimensional Surface-Emitting Arrays Of GaAs/AlGaAs Diode Lasers

Diode laser degradation mechanisms: A review

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