Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers

Wagner, David K.; Waters, R. G.; Tihanyi, P.; Hill, Daniel; Roza, A. J.; Vollmer, Hubert; Leopold, Matthew

doi:10.1109/3.962

Cited by 53 publications

(2 citation statements)

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“…(1 InGaAsP lasers [12] and also the stronger n th -dependence, the increase of total injection current is primarily due to the rapid increase of the Auger current with increasing loss within the linear region. However, the increase of n th becomes particularly severe with further increase of loss (toward the lower end of L) and an anomalous increase of η d -1 is observed for the device with the shortest cavity length (the largest loss), similar to previous reports [15][16][17]. This behaviour is related to the strong gain saturation at high injection current densities, typical for a QWs laser [18].…”

Section: Resultssupporting

confidence: 77%

Coupling of large optical loss with Auger recombination in 1.3 μm InGaAsP lasers investigated using hydrostatic pressure

Jin

Sweeney

Adams

et al. 2003

Physica Status Solidi (b)

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InGaAsP lasers with different losses have been investigated under hydrostatic pressure at room temperature. It is shown that, for large loss devices, the threshold current decreases more rapidly with increasing pressure than the expected variation of the typical direct band-to-band Auger recombination currents. We also measured the spontaneous emission in a large loss device to determine the pressure dependence of the respective recombination current component at laser threshold. It is found that the Auger current reduces strongly and the radiative current also decreases with increasing pressure. This is attributed to a reduction of the total loss coupled with Auger recombination with pressure.Introduction InGaAsP/InP is an important III -V semiconductor system that is widely used for 1.3 µm and 1.55 µm lasers for optical fibre communications. It has been shown that high sensitivity in the temperature characteristics of InGaAsP lasers is primarily due to severe Auger recombination at room temperature (RT) [1][2][3][4][5][6]. Furthermore, increasing optical losses with temperature degrades the laser efficiency. This effect may in turn couple with the Auger recombination and significantly degrade the temperature characteristics of InGaAsP devices for high temperature and high power operation. For a large mirror loss device, which is due to either short cavity length or low facet reflectivity, this coupling effect with the Auger recombination is significant even at RT because a large threshold gain and high carrier density are required. This makes the quantitative analyses of device characterisation more complicated.Hydrostatic pressure increases the direct band gap, E g , of III-V semiconductor materials, whilst each recombination mechanism shows a distinct E g dependence [7,8], it is therefore very helpful to understand the effects of large losses coupled with Auger recombination using high pressure. In this paper we present a detailed investigation on the pressure dependence of the threshold current in InGaAsP lasers with different mirror losses.

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