In this study, a pn homojunction was intentionally fabricated in the Cu(InGa)Se2 (CIGS) layer by Zn doping. For Zn doping of the CIGS layer, Zn was evaporated after CIGS formation, and a potential improvement in cell performance was confirmed by this technique. Furthermore, Zn diffusion into the CIGS film was investigated by secondary ion mass spectroscopy (SIMS). A conductivity-type conversion from p-type to n-type was studied by the measurement of the cross-sectional electron beam-induced current (junction EBIC: JEBIC) and the spectral response of solar cells. A conversion efficiency of 11.5% has been achieved using the Zn-doped CIGS layer without a buffer layer and by the formation of a pn homojunction in the CIGS absorber.
We performed a systematic study of ion-implanted 6H-SiC standards to find the optimal regimes for SIMS analysis. Relative sensitivity factors (RSFs) were acquired for operating conditions typical of practical SIMS applications. The experimental SiC RSFs were compared with those found for silicon: 1 the matrix effect was insignificant in most cases. It was found that the SiO − cluster ion cannot represent correctly the real oxygen distribution in SiC. The physics of the effect is discussed.
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