Quantitative SIMS analysis of SiC

Kudriavtsev, Yu.; Villegas, A.; Godines, A.; Asomoza, R.; Usov, I.O.

doi:10.1002/sia.1561

Cited by 15 publications

(8 citation statements)

References 2 publications

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“…The nitrogen content of the sample with the highest concentration of N atoms as determined by SIMS matches the XPS results, which verifies the accuracy of the RSFs taken from the literature. 25 Nitrogen content increases monotonically, but nonlinearly with increasing ammonia flow rate fraction. This is likely due, in part, to reaction of some of the reactant gases prior to reaching the wafers, either in the tube itself or in the gas handling lines.…”

Section: Resultsmentioning

confidence: 98%

Electrical and Mechanical Characterization of Doped and Annealed Polycrystalline 3C-SiC Thin Films

Roper

Radmilović

Howe

et al. 2009

J. Electrochem. Soc.

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ϩDeposition of doped polycrystalline 3C-SiC thin films from the precursors 1,3-disilabutane ͑DSB͒ and dichlorosilane ͑DCS͒, and the dopant precursor ammonia is investigated in a large-scale low-pressure chemical vapor deposition ͑LPCVD͒ reactor for micro-and nanoelectromechanical systems ͑M/NEMS͒ applications. Films deposited from only DSB and NH 3 have residual stresses in excess of 1.8 GPa tensile and resistivity values of Ͼ4.8 ⍀ cm. Addition of DCS yields films that exhibit mechanical and electrical properties more favorable for M/NEMS devices. For films deposited with DCS, electrical resistivity varies between 100 ⍀ cm for undoped, as-deposited films to 0.02 ⍀ cm for films doped with 0.95 at % nitrogen. Residual stress of films deposited from DSB, DCS, and NH 3 varies little for as-deposited films with different doping concentrations; however, annealing in an argon ambient shifts residual stress toward, and in some cases, into the compressive regime. The strain gradient, which is less than 8 ϫ 10 −4 m −1 in magnitude for all as-deposited films from DSB, DCS, and NH 3 , shifts to large negative values in excess of 10 −2 m −1 upon annealing for 8 h at 1050°C in an argon ambient. Two sources of stress shift with annealing are identified, namely oxygen diffusion and a change in N atom bonding.Silicon carbide ͑SiC͒ with its high melting point, high modulus, high fracture strength, chemical inertness, and extreme hardness 1-6 is witnessing a surge in applications 7-9 in micro-and nanoelectromechanical systems ͑M/NEMS͒ intended for operation in harsh environments. Polycrystalline cubic 3C-silicon carbide ͑poly-SiC͒ thin films are implemented in M/NEMS as structural layers 1,5 as well as adhesion and wear-reducing surface coatings. 2,4 Moreover, the high modulus-to-density ratio of SiC makes it an attractive material for high-frequency resonators and filters. 10,11 Chemical vapor deposition of high-quality poly-SiC films for M/NEMS has been demonstrated in large-scale reactors capable of deposition on 100 and 150 mm diam wafers. 12,13 Many applications require routing electrical signals through the structural layers. For such devices, it is necessary to deposit high-quality films with controllable resistivity. To this end, effective doping of poly-SiC films has been demonstrated using the precursor 1,3-disilabutane ͑DSB͒ with ammonia as the in situ dopant precursor 14-16 as well as using the dual-source precursors dichlorosilane ͑DCS͒ and acetylene with ammonia as the in situ dopant precursor. 17 Control of mechanical properties of the structural layer, including residual stress and strain gradient, is also necessary for M/NEMS applications, since high residual stress can lead to film cracking, 18 compressive residual stress can cause beam buckling, 19 and large strain gradients lead to curling of released microstructures. Moreover, residual stress exerts a force on mechanical oscillators with multiple anchor points, thus shifting their resonant frequencies. 20 Recent efforts have demonstrated a large degree of contr...

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Section: Resultsmentioning

confidence: 98%

Electrical and Mechanical Characterization of Doped and Annealed Polycrystalline 3C-SiC Thin Films

Roper

Radmilović

Howe

et al. 2009

J. Electrochem. Soc.

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“…are also found. [8,11] It is found by comparing with Fig. 5(a) and (b) that the intensity of the character Ar + signal was greatly decreased after annealing at 873 K, where its intensity is about 1 × 10 4 shown in Fig.…”

Section: Resultsmentioning

confidence: 84%

Study in the effect of annealing on hydrogen retention properties of C‐90%SiC films

Ren

Zhang

Yang

et al. 2008

Surface & Interface Analysis

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Carbon-rich silicon carbide (C-90%SiC) films as hydrogen barriers were deposited on the surface of stainless steel substrates with magnetron sputtering, and then bombarded by argon ion beam. In order to remove the argon atoms reserved during films preparation, some samples with the prepared C-90%SiC films were thermally annealed for 30 min at 473, 673 and 873 K in vacuum, respectively. These samples together with the un-annealed ones were then irradiated by a 5 keV hydrogen ion beam. SEM was used to investigate the surface micrograph of those films and SIMS was used to measure the mass spectra of positive species and the depth distribution of argon and hydrogen in the samples. A remarkable decrease in hydrogen intensity in the substrates with annealing indicates that annealing for removing argon can effectively improve hydrogen retention properties of the C-90%SiC films.

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“…All SIMS measurements were realized with a Cameca IMS-7F magnetic sector mass spectrometer. We used Cs + primary ion beams [7] at 3 keV impact energy. The incidence angle was about 23° from normal.…”

Section: Methodsmentioning

confidence: 99%

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

Ottaviani

Biondo²,

Daineche

et al. 2011

AIP Conference Proceedings

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This paper focuses on the process giving rise to Nitrogen introduction into SiC p-type epitaxial layers. Standard ion implantation and PULSION TM processes are performed at two distinct energies (700 eV and 7 keV), followed by an annealing at 1600°C in a furnace specifically adapted to SiC material, aiming at creating thin n + p junctions. The doping profiles issued from the implantations show an important channeling effect for all samples. Surface roughness and Nitrogen activation after annealing are studied using AFM and Micro-Four Point Probe means, respectively. A better surface morphology is found on plasma-implanted samples, with a higher sheet resistance (in comparison with standard samples) which could either be related to a lower implanted dose and/or to a lower dopant activation.

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Quantitative SIMS analysis of SiC

Cited by 15 publications

References 2 publications

Electrical and Mechanical Characterization of Doped and Annealed Polycrystalline 3C-SiC Thin Films

Electrical and Mechanical Characterization of Doped and Annealed Polycrystalline 3C-SiC Thin Films

Study in the effect of annealing on hydrogen retention properties of C‐90%SiC films

Plasma Immersion Ion Implantation Applied To N[sup +]P Junction Realisation In 4H-SiC

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