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A model is developed for estimating effects due to electron scattering from grain boundaries, occurring simultaneously with background scattering. Since grain-boundary effects are negligible in bulk materials, the model is particularly relevant to polycrystalline metal films in which a very fine-grained structure is often found. It is shown by solution of the appropriate Boltzmann equation, that the total resistivity can be strongly dominated by grain-boundary scattering. If grain size increases with film thickness, a marked dependence of resistivity on thickness exists, even when scattering from external surfaces is negligible or is completely specular.

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Critical current, pinning, and the resistive state of superconducting single-crystal niobium with various types of defect structure Low Temp. Phys. 31, 564 (2005); 10.1063/1.2001633 Electrical resistivity of rfsputtered iron oxide thin films J. Appl. Phys. 61, 4388 (1987); 10.1063/1.338431 Structures and SAW properties of rfsputtered singlecrystal films of ZnO on sapphire

Data on resistivity at room temperature in polycrystalline and single-crystal Permalloy (80 Ni-20 Fe) thin films are analyzed in terms of grain boundary scattering and the dc size effect, respectively.