Magnetoresistanceoscillations periodic with respect to the flux h/e have been observed in submicron-diameter Au rings, along with weaker h/2e oscillations. The h/e oscillations persist to very large magnetic fields. The background structure in the magnetoresistance was not symmetric about zero field. The temperature dependence of both the amplitude of the oscillations and the background are consistent with the recent theory by Stone.

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Barium strontium titanate thin films are being developed as capacitors in dynamic random access memories. These films, grown on silicon substrates, are under tensile residual stress. By a converse electrostrictive effect, the in-plane tensile stress reduces the capacitance in the thickness direction of the film. We measured the substrate curvature change upon the removal of the film, and found the magnitude of the residual stress to be 610 MPa. In a separate experiment, we applied a force to vary the stress in a film on a substrate, and simultaneously recorded the capacitance change of the film. The measurements quantify the effect of stress on thin film capacitance. The stress free capacitance was found to be 23% higher than the capacitance under residual stress.

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