We present a detailed
powder X-ray diffraction (p-XRD) and transmission
electron microscopy (TEM) study to explore the structural properties
of CdS, CdSe, and CdTe semiconductor nanowires (NWs) grown by the
solution-liquid-solid (SLS) method. The SLS method yields easily dispersible
NWs with a controllable diameter and polytypic crystal structure.
The different samples exhibit different wurtzite (WZ) and zincblende
(ZB) fractions, which are investigated by high-resolution TEM of selected
wires with distinct crystallographic orientations, and also by p-XRD
of a large amount of NWs. In combination with atomistic models containing
up to one million atoms, we calculate diffraction patterns based on
the kinematic theory of diffraction. We show that the ZB-rate in WZ-rich
NWs can be directly determined from relative reflex intensities in
the experimental p-XRD data.
The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an Indium Phosphide (InP) scaled Heterojunction Bipolar Transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the fT of the devices can be improved from 90 GHz for the HRL I n € ' standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology [l]. Mayo has designed several digital circuits in this scaled technology, the initial test results for which will be reported in this paper.
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