2021
DOI: 10.1021/acs.chemmater.0c04689
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Determination of the Wurtzite and Zincblende Fractions in II–VI Semiconductor Nanowires

Abstract: We present a detailed powder X-ray diffraction (p-XRD) and transmission electron microscopy (TEM) study to explore the structural properties of CdS, CdSe, and CdTe semiconductor nanowires (NWs) grown by the solution-liquid-solid (SLS) method. The SLS method yields easily dispersible NWs with a controllable diameter and polytypic crystal structure. The different samples exhibit different wurtzite (WZ) and zincblende (ZB) fractions, which are investigated by high-resolution TEM of selected wires with distinct cr… Show more

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Cited by 8 publications
(10 citation statements)
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“…The XRD pattern of the CdSe QDs exhibited characteristic diffraction peaks located at ∼26°(111), ∼43°(220), and ∼50°( 311) 2θ values, which were consistent with the zinc blende crystal lattice (ICDD/PDF no. 41528) 57 (Figure 4a). However, the diffraction peaks of the CdSe lattice were significantly attenuated in the diffractograms of QDs (I), QDs (II), and QDs (III), and new peaks appeared toward larger 2θ angles, consistent with the diffraction pattern of the zinc blende crystal lattice of ZnS (ICDD/PDF no.…”
Section: Acs Applied Nano Materialsmentioning
confidence: 99%
“…The XRD pattern of the CdSe QDs exhibited characteristic diffraction peaks located at ∼26°(111), ∼43°(220), and ∼50°( 311) 2θ values, which were consistent with the zinc blende crystal lattice (ICDD/PDF no. 41528) 57 (Figure 4a). However, the diffraction peaks of the CdSe lattice were significantly attenuated in the diffractograms of QDs (I), QDs (II), and QDs (III), and new peaks appeared toward larger 2θ angles, consistent with the diffraction pattern of the zinc blende crystal lattice of ZnS (ICDD/PDF no.…”
Section: Acs Applied Nano Materialsmentioning
confidence: 99%
“…The PL scans in Figure (c,d) further highlight a feature of the PL of CdSe QWs which was in the focus of investigations in the past. , Observing localized PL enhancement at the illuminated spots shows that CdSe QWs exhibit bound excitonic emission. The fixation of excitons along the length of the QWs might result from the formation of excitonic complexes, which are locally bound to alternating zincblende and wurtzite segments or dopants. , …”
Section: Resultsmentioning
confidence: 99%
“…The Bi NPs ( d = 7.4 ± 1.3 nm) used in the synthesis were prepared according to a synthesis published in ref . A detailed description of the synthesis can be found in ref . The precursor cadmium di- n -octylphosphinate Cd­(DOPT) 2 was synthesized as described in ref .…”
Section: Methodsmentioning
confidence: 99%
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“…Polytypes, occurring in different structural modifications, are a special case of polymorphs, which share identical close-packed planes but differ only in the stacking sequence in the third dimension normal to these planes. Polytypes commonly exist in group II–VI, III–V, and IV-IV compound semiconductors, whose structures generally display cubic zinc-blende (ZB) and hexagonal wurtzite (WZ) forms. As one of the typical II–VI semiconductors, cadmium selenide (CdSe) has attracted extensive interest over the past 20 years, owing to its robust synthetic method and its ability to tune the optical behavior across the entire visible spectrum.…”
Section: Introductionmentioning
confidence: 99%