We present a detailed powder X-ray diffraction (p-XRD) and transmission electron microscopy (TEM) study to explore the structural properties of CdS, CdSe, and CdTe semiconductor nanowires (NWs) grown by the solution-liquid-solid (SLS) method. The SLS method yields easily dispersible NWs with a controllable diameter and polytypic crystal structure. The different samples exhibit different wurtzite (WZ) and zincblende (ZB) fractions, which are investigated by high-resolution TEM of selected wires with distinct crystallographic orientations, and also by p-XRD of a large amount of NWs. In combination with atomistic models containing up to one million atoms, we calculate diffraction patterns based on the kinematic theory of diffraction. We show that the ZB-rate in WZ-rich NWs can be directly determined from relative reflex intensities in the experimental p-XRD data.

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The Mayo Foundation Special Purpose Processor Development Group (Mayo) and HRL Laboratories (HRL) are developing circuits for implementation in an Indium Phosphide (InP) scaled Heterojunction Bipolar Transistor (HBT) technology which has the potential for very high performance analog and digital operation. Preliminary results from HRL show that the fT of the devices can be improved from 90 GHz for the HRL I n € ' standard (2 micron emitter) HBT technology to approximately 180 GHz for this scaled (1 micron emitter) HBT technology [l]. Mayo has designed several digital circuits in this scaled technology, the initial test results for which will be reported in this paper.

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