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In this paper, a new approach toward the design of a memristor based nonvolatile static randomaccess memory (SRAM) cell using a combination of memristor and metal-oxide semiconductor devices is proposed. Memristor and MOSFETs of the Taiwan Semiconductor Manufacturing Company's 180-nm technology are used to form a single cell. The predicted area of this cell is significantly less and the average read-write power is ∼25 times less than a conventional 6-T SRAM cell of the same complementary metaloxide semiconductor technology. Read time is much less than the 6-T SRAM cell. However, write time is a bit higher, and can be improved by increasing the mobility of the memristor. The nonvolatile characteristic of the cell makes it attractive for nonvolatile random access memory design.

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