Zur transversalen magnetischen Widerstands�nderung von InSb

Weiß, H.; Welker, H.

doi:10.1007/bf01340677

Cited by 96 publications

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“…(13) in three different regimes determined by the ratio of the sample width and recombination length. For the widest samples, we find the standard [9,24] nonsaturating geometric MR, which is quadratic in the field…”

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confidence: 92%

“…Certain specific features of excitation spectra and models of disorder may also lead to linear MR [25,[31][32][33][34][35]. Experimentally, linear MR has been observed in a wide variety of 2D and 3D materials [1][2][3][4][5][6][7][8][9][11][12][13][14][15][16][17][18][36][37][38][39][40][41][42] and in a broad range of magnetic fields, suggesting that a more general mechanism is behind the observed behavior.…”

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confidence: 99%

“…The conventional Drude theory predicts that the longitudinal resistivity of a two-component system [9,10] depends on the applied magnetic field (in contrast to the simplest one-component case [24,26,44]):…”

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confidence: 99%

“…(1) for n ¼ 0]. In single-component systems, such a geometric effect is absent due to the presence of Hall voltage, unless the Corbino geometry is used or the sample is specifically prepared to be short and wide, i.e., for W ≫ L [9,47].…”

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Magnetoresistance in Two-Component Systems

et al. 2015

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Two-component systems with equal concentrations of electrons and holes exhibit nonsaturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality due to recombination. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for two-and three-dimensional semimetals and narrow band semiconductors including most of the topological insulators.

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Magnetoresistance in Two-Component Systems

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“…Conventional Drude-like theories of transport in twocomponent systems predict parabolic magnetoresistance that saturates in classically strong fields 1,3,73,74 . Taking into account additional relaxation processes may lead to semiclassical mechanisms of LMR in diverse physical systems including 3D metallic slabs with complex Fermi surfaces and smooth boundaries 75,76 ; strongly inhomogeneous or granular materials [77][78][79][80] ; short samples 80,81 ; disordered 3D metals 82,83 ; and compensated two-component systems 84 .…”

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Magnetoresistance of compensated semimetals in confined geometries

et al. 2017

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Two-component conductors -e.g., semi-metals and narrow band semiconductors -often exhibit unusually strong magnetoresistance in a wide temperature range. Suppression of the Hall voltage near charge neutrality in such systems gives rise to a strong quasiparticle drift in the direction perpendicular to the electric current and magnetic field. This drift is responsible for a strong geometrical increase of resistance even in weak magnetic fields. Combining the Boltzmann kinetic equation with sample electrostatics, we develop a microscopic theory of magnetotransport in two and three spatial dimensions. The compensated Hall effect in confined geometry is always accompanied by electronhole recombination near the sample edges and at large-scale inhomogeneities. As the result, classical edge currents may dominate the resistance in the vicinity of charge compensation. The effect leads to linear magnetoresistance in two dimensions in a broad range of parameters. In three dimensions, the magnetoresistance is normally quadratic in the field, with the linear regime restricted to rectangular samples with magnetic field directed perpendicular to the sample surface. Finally, we discuss the effects of heat flow and temperature inhomogeneities on the magnetoresistance.The theory of magnetotransport in solids 1,2 is a mature branch of condensed matter physics. Measurements of magnetoresistance and classical Hall effect are long recognized as valuable experimental tools to characterize conducting samples. Interpreting the experiments within the standard Drude theory 1,3,4 , one may extract many useful sample characteristics such as the electron mobility and charge density at the Fermi level. However, in materials with more than one type of charge carriers -e.g., semimetals and narrow band semiconductors -the situation is more complex. Indeed, already in 1928 Kapitsa observed unconventional magnetoresistance in semi-metal bismuth films 5 . More recently, interest in magnetotransport has been revived with the discovery of novel twocomponent systems including graphene 6-11 , topological insulators 12-16 , and Weyl semimetals [17][18][19][20][21][22][23][24][25][26][27] . A common feature of all such systems is the existence of the charge neutrality (or, charge compensation) point, where the concentrations of the positively and negatively charged quasiparticles (electron-like and hole-like, respectively) are equal and the system is electrically neutral.A fast growing number of experiments on novel twocomponent materials exhibit unconventional transport properties in magnetic field: (i) linear magnetoresistance (LMR) was reported in graphene and topological insulators close to charge neutrality [85][86][87] . In weak fields, resistivity of two-dimensional (2D) electron systems acquires an interaction correction 88 that is linear in the field.The extreme quantum limit of Refs. 85-87 has been realized in graphene 28 , Bi 2 Te 3 nanosheets 56 , and possibly in the novel topological material LuPdBi 57 . However, this mechanism is applicable...

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Magnetogalvanic Sensors

Popovi¹,

Heidenreich²

1995

Sensors Set

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Zur transversalen magnetischen Widerstands�nderung von InSb

Cited by 96 publications

References 0 publications

Magnetoresistance in Two-Component Systems

Magnetoresistance in Two-Component Systems

Magnetoresistance of compensated semimetals in confined geometries

Magnetogalvanic Sensors

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