Magnetoresistance in Two-Component Systems

Alekseev, P. S.; Дмитриев, А. П.; Gornyi, I. V.; Kachorovskii, V. Yu.; Narozhny, B. N.; Schütt, Michael; Titov, M.

doi:10.1103/physrevlett.114.156601

Cited by 91 publications

(153 citation statements)

References 57 publications

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“…In strong fields, B → ∞, we recover positive linear MR [46][47][48] . This behavior corresponds to the following regime of parameters: ω c τ ee 1 and ω…”

Section: Strong Fieldsmentioning

confidence: 81%

“…In this case, the equations (2) describe the two (electron and hole) fluids that are weakly coupled by electron-hole scattering 47,48 . Unlike the single-component fluid considered in Ref.…”

Section: Compensated Semimetals In Two Dimensional Strip Geometrymentioning

confidence: 99%

“…(2). In the inviscid case 46,47 , the recombination-induced compressibility leads to positive linear magnetoresistance in classically strong fields.…”

Section: Compensated Semimetals In Two Dimensional Strip Geometrymentioning

confidence: 99%

“…Finally, the electron-hole recombination tends to create its own boundary layer 47,48,55 . In this paper we consider the case of weak (or slow) recombination, such that the corresponding length scale is longer than the Gurzhi length, R > G .…”

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confidence: 99%

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Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

et al. 2018

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Ultra-pure conductors may exhibit hydrodynamic transport where the collective motion of charge carriers resembles the flow of a viscous fluid. In a confined geometry (e.g., in ultra-high quality nanostructures) the electronic fluid assumes a Poiseuille-like flow. Applying an external magnetic field tends to diminish viscous effects leading to large negative magnetoresistance. In two-component systems near charge neutrality the hydrodynamic flow of charge carriers is strongly affected by the mutual friction between the two constituents. At low fields, the magnetoresistance is negative, however at high fields the interplay between electron-hole scattering, recombination, and viscosity results in a dramatic change of the flow profile: the magnetoresistance changes its sign and eventually becomes linear in very high fields. This novel non-monotonic magnetoresistance can be used as a fingerprint to detect viscous flow in two-component conducting systems.The independent particle approximation 1,2 has dominated the solid state physics for nearly a century. While clearly successful in describing most of the basic transport phenomena in metals and semiconductors, this approach completely neglects Coulomb interaction between charge carriers (the latter is frequently said to be justified by the "weakness" of electron-electron interaction due to, e.g., screening or statistical effects). To be more specific, in many conventional conductors the typical interaction length scale, ee , is too long in comparison to other relevant scales in the system. In particular, at low temperatures the dominant scattering process is due to potential disorder and hence the shortest length scale is the mean free path, dis ee , which determines the residual Drude resistivity at T = 0. At high temperatures, the electron-phonon interaction dominates, ph ee . If these two temperature regimes overlap, then indeed (at least, away from any phase transitions) the role of electron-electron interaction is reduced to small corrections. However, if there exists a temperature window where ee dis , ph , then in that case the independent particle approximation is violated: the motion of charge carriers becomes collective (or hydrodynamic) and hence transport properties of the system are determined by interaction 3 .Signatures of the hydrodynamic behavior have been observed in recent experiments in graphene 4-6 and palladium cobaltate 7 . The effect of external magnetic field on electronic transport in systems with ee dis , ph was studied in magnetotransport measurements in ultra-highmobility GaAs quantum wells 8-10 and more recently in the Weyl semimetal WP 2 11 reporting, in both cases, large negative magnetoresistance. A detailed account of the history of magnetotransport measurements is beyond the scope of this paper. Here we only stress the following well known facts: at the single-particle level, there is no classical magnetoresistance (MR) in single-band (or one-component) systems; taking into account more than one band of carriers (e.g., in semiconduct...

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“…In strong fields, B → ∞, we recover positive linear MR [46][47][48] . This behavior corresponds to the following regime of parameters: ω c τ ee 1 and ω…”

Section: Strong Fieldsmentioning

confidence: 81%

Section: Compensated Semimetals In Two Dimensional Strip Geometrymentioning

confidence: 99%

“…(2). In the inviscid case 46,47 , the recombination-induced compressibility leads to positive linear magnetoresistance in classically strong fields.…”

Section: Compensated Semimetals In Two Dimensional Strip Geometrymentioning

confidence: 99%

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Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

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“…According to these experimental results, the magnetoresistance effect in WTe 2 devices may vary with thickness and quality of the tested device. As a compensated semi-metal material, size finite effect [31,32] may also play a vital role in WTe 2 nano-device, introduce linear magnetoresistance.…”

Section: Magnetoresistance In Devices and Gate Tuningmentioning

confidence: 99%

The study on quantum material WTe₂

Pan

Wang

Song

et al. 2018

Advances in Physics: X

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Quantum Oscillations in Ferromagnetic (Sb, V)₂Te₃ Topological Insulator Thin Films

et al. 2021

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3d-element dopants. Hence, the broken time-reversal symmetry may enable the detection of the quantum anomalous Hall effect (QAHE) due to the presence of dissipationless edge states. [10][11][12] The combination of such devices with conventional superconductors were predicted to host Majorana fermions, which are suitable for braiding devices for use in topological quantum computers. [13,14] As the band structure of real materials is complex, it is challenging to realize the QAHE or Majorana fermions at a higher temperature. Highly precise band structure engineering is required to suppress the contribution of the bulk bands effectively. To date, this has posed one of the main limiting barriers to the development of practical devices based on the QAHE. Therefore, a deeper understanding of how the band structure of TI can be artificially designed is inevitable.Shubnikov-de Hass (SdH) oscillations are a quantum coherence phenomenon commonly observed in clean metals, where the charge carriers can complete at least one full cyclotron motion without impurity scattering under magnetic field. [15] Wealth parameters such as the Fermi surface topology and mean-free path can be extracted from the oscillation period and the temperature-dependent amplitude variation. [16] Quantum oscillations have been extensively used as a tool to study high temperature superconductors and topological materials. [17][18][19][20] The recent observation of the three-dimensional (3D) quantum Hall effect (QHE) in ZrTe 5 has attracted further enthusiasm to study of quantum oscillations in TI materials. [21] Quantum oscillations have been observed in binary compounds, Bi 2 Se 3 , Bi 2 Te 3 , and Sb 2 Te 3 bulk crystals and thin flakes. [22][23][24][25] In these systems, the oscillations originate from either the surface states or the bulk bands, depending on the position of the chemical potential. [26] Recently, quantum oscillations were discovered in 3d elements doped TI single crystals, such as Fe-doped Sb 2 Te 3 and V doped (Bi, Sn, Sb) 2 (Te, S) 3 . [24,27] However, no long-range FM order was observed. The results motivated the preparation of thin films of similar materials with the potential for FM order coexisting with high mobility topological surface states.So far, to our knowledge, there are only a few reports on the observation of quantum oscillations in magnetically doped TIs, such as V-doped (Bi, Sb) 2 Te 3 , Sm-doped Bi 2 Se 3 . [28,29] However,effective way of manipulating 2D surface states in magnetic topological insulators may open a new route for quantum technologies based on the quantum anomalous Hall effect. The doping-dependent evolution of the electronic band structure in the topological insulator Sb 2−x V x Te 3 (0 ≤ x ≤ 0.102) thin films is studied by means of electrical transport. Sb 2−x V x Te 3 thin films were prepared by molecular beam epitaxy, and Shubnikov-de Hass (SdH) oscillations are observed in both the longitudinal and transverse transport channels. Doping with the 3d element, vanadium, induces long-range ferromagne...

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Magnetoresistance in Two-Component Systems

Cited by 91 publications

References 57 publications

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

The study on quantum material WTe₂

Quantum Oscillations in Ferromagnetic (Sb, V)₂Te₃ Topological Insulator Thin Films

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Magnetoresistance in Two-Component Systems

Cited by 91 publications

References 57 publications

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

Nonmonotonic magnetoresistance of a two-dimensional viscous electron-hole fluid in a confined geometry

The study on quantum material WTe2

Quantum Oscillations in Ferromagnetic (Sb, V)2Te3 Topological Insulator Thin Films

Contact Info

Product

Resources

About

The study on quantum material WTe₂

Quantum Oscillations in Ferromagnetic (Sb, V)₂Te₃ Topological Insulator Thin Films